Qualitative analysis of growth mechanism of polycrystalline InAs thin films grown by molecular beam epitaxy

Arpana Agrawal; Youngbin Tchoe; Heehun Kim; Joon Young Park

doi:10.1016/j.apsusc.2018.08.076

Qualitative analysis of growth mechanism of polycrystalline InAs thin films grown by molecular beam epitaxy

Arpana Agrawal
, Youngbin Tchoe
, Heehun Kim
, Joon Young Park

Seoul National University

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The mechanism of surfaces/interfaces and precise control of growth morphology is a key parameter for any specific device application. Herein, we report on a qualitative growth study of molecular beam epitaxy-grown polycrystalline InAs thin films on a lattice-mismatched Si(1 0 0) substrate using atomic force microscopy. The height-height correlation function (HHCF) and power spectral density function (PSDF) were employed to analyze the surface structures. Clear oscillatory behavior in the HHCF for sufficiently larger lateral distances suggests a mound-like morphology, which was confirmed by the existence of a characteristic frequency peak in the PSDF. The growth mechanism is described qualitatively by the Schwoebel barrier (roughening) effect coupled with the Mullins diffusion model (smoothing effect).

Original language	English
Pages (from-to)	81-85
Number of pages	5
Journal	Applied Surface Science
Volume	462
DOIs	https://doi.org/10.1016/j.apsusc.2018.08.076
State	Published - 31 Dec 2018
Externally published	Yes

Keywords

Atomic force microscopy
Height-height correlation function
Power spectral density function
Thin film

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10.1016/j.apsusc.2018.08.076

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title = "Qualitative analysis of growth mechanism of polycrystalline InAs thin films grown by molecular beam epitaxy",

abstract = "The mechanism of surfaces/interfaces and precise control of growth morphology is a key parameter for any specific device application. Herein, we report on a qualitative growth study of molecular beam epitaxy-grown polycrystalline InAs thin films on a lattice-mismatched Si(1 0 0) substrate using atomic force microscopy. The height-height correlation function (HHCF) and power spectral density function (PSDF) were employed to analyze the surface structures. Clear oscillatory behavior in the HHCF for sufficiently larger lateral distances suggests a mound-like morphology, which was confirmed by the existence of a characteristic frequency peak in the PSDF. The growth mechanism is described qualitatively by the Schwoebel barrier (roughening) effect coupled with the Mullins diffusion model (smoothing effect).",

keywords = "Atomic force microscopy, Height-height correlation function, Power spectral density function, Thin film",

author = "Arpana Agrawal and Youngbin Tchoe and Heehun Kim and Park, \{Joon Young\}",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = dec,

day = "31",

doi = "10.1016/j.apsusc.2018.08.076",

language = "English",

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journal = "Applied Surface Science",

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TY - JOUR

T1 - Qualitative analysis of growth mechanism of polycrystalline InAs thin films grown by molecular beam epitaxy

AU - Agrawal, Arpana

AU - Tchoe, Youngbin

AU - Kim, Heehun

AU - Park, Joon Young

PY - 2018/12/31

Y1 - 2018/12/31

N2 - The mechanism of surfaces/interfaces and precise control of growth morphology is a key parameter for any specific device application. Herein, we report on a qualitative growth study of molecular beam epitaxy-grown polycrystalline InAs thin films on a lattice-mismatched Si(1 0 0) substrate using atomic force microscopy. The height-height correlation function (HHCF) and power spectral density function (PSDF) were employed to analyze the surface structures. Clear oscillatory behavior in the HHCF for sufficiently larger lateral distances suggests a mound-like morphology, which was confirmed by the existence of a characteristic frequency peak in the PSDF. The growth mechanism is described qualitatively by the Schwoebel barrier (roughening) effect coupled with the Mullins diffusion model (smoothing effect).

AB - The mechanism of surfaces/interfaces and precise control of growth morphology is a key parameter for any specific device application. Herein, we report on a qualitative growth study of molecular beam epitaxy-grown polycrystalline InAs thin films on a lattice-mismatched Si(1 0 0) substrate using atomic force microscopy. The height-height correlation function (HHCF) and power spectral density function (PSDF) were employed to analyze the surface structures. Clear oscillatory behavior in the HHCF for sufficiently larger lateral distances suggests a mound-like morphology, which was confirmed by the existence of a characteristic frequency peak in the PSDF. The growth mechanism is described qualitatively by the Schwoebel barrier (roughening) effect coupled with the Mullins diffusion model (smoothing effect).

KW - Atomic force microscopy

KW - Height-height correlation function

KW - Power spectral density function

KW - Thin film

UR - https://www.scopus.com/pages/publications/85051494654

U2 - 10.1016/j.apsusc.2018.08.076

DO - 10.1016/j.apsusc.2018.08.076

M3 - Article

AN - SCOPUS:85051494654

SN - 0169-4332

VL - 462

SP - 81

EP - 85

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Qualitative analysis of growth mechanism of polycrystalline InAs thin films grown by molecular beam epitaxy

Abstract

Keywords

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