TY - GEN
T1 - PVT-invariant single-to-differential data converter with minimum skew and duty-ratio distortion
AU - Park, Youn Sik
AU - Lee, Sung Wook
AU - Kong, Bai Sun
AU - Park, Kwang Il
AU - Ihm, Jeong Don
AU - Choi, Joo Sun
AU - Jun, Young Hyun
PY - 2008
Y1 - 2008
N2 - This paper proposes PVT-invariant single-to-differential signal converter (SDC) applicable to the output circuitry of high-speed DDR SDRAM. The proposed SDC generates PVT-invariant differential-output sampling clock using a phase interpolation technique and a symmetric structure, and improves the aperture window of output data in source synchronous DDR SDRAM. The proposed SDC was simulated using 1.8-V 80-nm DRAM technology. The comparison result indicates that the differential clocks generated by the proposed SDC achieve 80.6% reduction of skew, 76.6% reduction of duty-cycle distortion, 61.7% of reduction of delay variation, and 8.5% reduction of maximum current for a given process, voltage, and temperature (PVT) variations, as compared to conventional SDCs. The I/O interface of a source-synchronous DDR SDRAM designed using the proposed SDC, which is operating at 1.0-Gbps/pin data rate has aperture window increased by 15.3% and ISI improved by 67.7% in comparison to conventional I/O interface.
AB - This paper proposes PVT-invariant single-to-differential signal converter (SDC) applicable to the output circuitry of high-speed DDR SDRAM. The proposed SDC generates PVT-invariant differential-output sampling clock using a phase interpolation technique and a symmetric structure, and improves the aperture window of output data in source synchronous DDR SDRAM. The proposed SDC was simulated using 1.8-V 80-nm DRAM technology. The comparison result indicates that the differential clocks generated by the proposed SDC achieve 80.6% reduction of skew, 76.6% reduction of duty-cycle distortion, 61.7% of reduction of delay variation, and 8.5% reduction of maximum current for a given process, voltage, and temperature (PVT) variations, as compared to conventional SDCs. The I/O interface of a source-synchronous DDR SDRAM designed using the proposed SDC, which is operating at 1.0-Gbps/pin data rate has aperture window increased by 15.3% and ISI improved by 67.7% in comparison to conventional I/O interface.
UR - https://www.scopus.com/pages/publications/51749099368
U2 - 10.1109/ISCAS.2008.4541814
DO - 10.1109/ISCAS.2008.4541814
M3 - Conference contribution
AN - SCOPUS:51749099368
SN - 9781424416844
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
SP - 1902
EP - 1905
BT - 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
T2 - 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
Y2 - 18 May 2008 through 21 May 2008
ER -