Pulse-biased etching of Si₃N₄ Layer in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Resist Structures

Engineering

• Nanoscale 100%
• Power Source 50%
• Dielectrics 25%
• Silicon Dioxide 25%
• Photoresist 25%
• Amorphous Carbon 25%
• Duty Ratio 25%
• Carbon Layer 25%
• Plasma System 25%
• Gas Flow 25%
• Dielectric Layer 25%
• Generated Plasma 25%
• Continuous Wave 25%

Material Science

• Silicon Nitride 100%
• Dielectric Material 33%
• Surface (Surface Science) 33%
• Plasma Etching 33%
• Amorphous Carbon 16%
• Gas Flow 16%