Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Jung Ho Yoon; Kyung Min Kim; Seul Ji Song; Jun Yeong Seok; Kyung Jean Yoon; Dae Eun Kwon; Tae Hyung Park; Young Jae Kwon; Xinglong Shao; Cheol Seong Hwang

doi:10.1002/adma.201501167

Pt/Ta₂O₅/HfO_2-_x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Jung Ho Yoon
, Kyung Min Kim
, Seul Ji Song
, Jun Yeong Seok
, Kyung Jean Yoon
, Dae Eun Kwon
, Tae Hyung Park
, Young Jae Kwon
, Xinglong Shao
, Cheol Seong Hwang

Research output: Contribution to journal › Article › peer-review

165 Scopus citations

Abstract

Pt/Ta₂O₅/HfO_2-_x/Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism.

Original language	English
Pages (from-to)	3811-3816
Number of pages	6
Journal	Advanced Materials
Volume	27
Issue number	25
DOIs	https://doi.org/10.1002/adma.201501167
State	Published - 1 Jul 2015
Externally published	Yes

Keywords

electroforming-free
multilevel switching
resistive switching memory
self-rectifying
uniformity

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10.1002/adma.201501167

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title = "Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash",

abstract = "Pt/Ta2O5/HfO2-x/Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism.",

keywords = "electroforming-free, multilevel switching, resistive switching memory, self-rectifying, uniformity",

author = "Yoon, \{Jung Ho\} and Kim, \{Kyung Min\} and Song, \{Seul Ji\} and Seok, \{Jun Yeong\} and Yoon, \{Kyung Jean\} and Kwon, \{Dae Eun\} and Park, \{Tae Hyung\} and Kwon, \{Young Jae\} and Xinglong Shao and Hwang, \{Cheol Seong\}",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2015",

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doi = "10.1002/adma.201501167",

language = "English",

volume = "27",

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journal = "Advanced Materials",

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publisher = "Wiley-Blackwell",

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TY - JOUR

T1 - Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

AU - Yoon, Jung Ho

AU - Kim, Kyung Min

AU - Song, Seul Ji

AU - Seok, Jun Yeong

AU - Yoon, Kyung Jean

AU - Kwon, Dae Eun

AU - Park, Tae Hyung

AU - Kwon, Young Jae

AU - Shao, Xinglong

AU - Hwang, Cheol Seong

PY - 2015/7/1

Y1 - 2015/7/1

N2 - Pt/Ta2O5/HfO2-x/Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism.

AB - Pt/Ta2O5/HfO2-x/Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism.

KW - electroforming-free

KW - multilevel switching

KW - resistive switching memory

KW - self-rectifying

KW - uniformity

UR - https://www.scopus.com/pages/publications/85027918938

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DO - 10.1002/adma.201501167

M3 - Article

AN - SCOPUS:85027918938

SN - 0935-9648

VL - 27

SP - 3811

EP - 3816

JO - Advanced Materials

JF - Advanced Materials

IS - 25

ER -

Pt/Ta₂O₅/HfO_2-_x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Abstract

Keywords

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