Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode

Rui Li; S. J. Lee; H. B. Yao; D. Z. Chi; M. B. Yu; D. L. Kwong

doi:10.1109/LED.2006.874128

Pt-germanide schottky source/drain germanium p-MOSFET with HfO₂ gate dielectric and TaN gate electrode

Rui Li, S. J. Lee, H. B. Yao, D. Z. Chi, M. B. Yu, D. L. Kwong

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Schottky source/drain (S/D) transistors using Pt-germanide and HfO₂/TaN gate stack are fabricated on Ge-substrate with conventional self-aligned top-gate process. It was found that Pt-germanide provides promising properties for p-MOSFET: negative effective hole barrier height, low resistivity, atomically sharp junction with Ge with good morphology. Pt-germanide Ge-p-MOSFETs showed well-behaved I_D-V_D characteristics and much suppressed I_off compared to Ni-germanide and conventional heavily doped S/D MOSFETs.

Original language	English
Pages (from-to)	476-478
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	6
DOIs	https://doi.org/10.1109/LED.2006.874128
State	Published - Jun 2006
Externally published	Yes

Keywords

Germanium
High-κ
MOSFET
Metal gate
Schottky

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10.1109/LED.2006.874128

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title = "Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode",

abstract = "Schottky source/drain (S/D) transistors using Pt-germanide and HfO2/TaN gate stack are fabricated on Ge-substrate with conventional self-aligned top-gate process. It was found that Pt-germanide provides promising properties for p-MOSFET: negative effective hole barrier height, low resistivity, atomically sharp junction with Ge with good morphology. Pt-germanide Ge-p-MOSFETs showed well-behaved ID-VD characteristics and much suppressed Ioff compared to Ni-germanide and conventional heavily doped S/D MOSFETs.",

keywords = "Germanium, High-κ, MOSFET, Metal gate, Schottky",

author = "Rui Li and Lee, \{S. J.\} and Yao, \{H. B.\} and Chi, \{D. Z.\} and Yu, \{M. B.\} and Kwong, \{D. L.\}",

year = "2006",

month = jun,

doi = "10.1109/LED.2006.874128",

language = "English",

volume = "27",

pages = "476--478",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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TY - JOUR

T1 - Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode

AU - Li, Rui

AU - Lee, S. J.

AU - Yao, H. B.

AU - Chi, D. Z.

AU - Yu, M. B.

AU - Kwong, D. L.

PY - 2006/6

Y1 - 2006/6

N2 - Schottky source/drain (S/D) transistors using Pt-germanide and HfO2/TaN gate stack are fabricated on Ge-substrate with conventional self-aligned top-gate process. It was found that Pt-germanide provides promising properties for p-MOSFET: negative effective hole barrier height, low resistivity, atomically sharp junction with Ge with good morphology. Pt-germanide Ge-p-MOSFETs showed well-behaved ID-VD characteristics and much suppressed Ioff compared to Ni-germanide and conventional heavily doped S/D MOSFETs.

AB - Schottky source/drain (S/D) transistors using Pt-germanide and HfO2/TaN gate stack are fabricated on Ge-substrate with conventional self-aligned top-gate process. It was found that Pt-germanide provides promising properties for p-MOSFET: negative effective hole barrier height, low resistivity, atomically sharp junction with Ge with good morphology. Pt-germanide Ge-p-MOSFETs showed well-behaved ID-VD characteristics and much suppressed Ioff compared to Ni-germanide and conventional heavily doped S/D MOSFETs.

KW - Germanium

KW - High-κ

KW - MOSFET

KW - Metal gate

KW - Schottky

UR - https://www.scopus.com/pages/publications/33744759866

U2 - 10.1109/LED.2006.874128

DO - 10.1109/LED.2006.874128

M3 - Article

AN - SCOPUS:33744759866

SN - 0741-3106

VL - 27

SP - 476

EP - 478

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

Pt-germanide schottky source/drain germanium p-MOSFET with HfO₂ gate dielectric and TaN gate electrode

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Keywords

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