Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack

Rui Li; L. E.E. Sung-Joo; Ming Hui Hong; Dong Zhi Chi; Dim Lee Kwong

doi:10.1143/JJAP.47.2548

Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO₂/Ge gate stack

Rui Li, L. E.E. Sung-Joo, Ming Hui Hong, Dong Zhi Chi, Dim Lee Kwong

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The formation and characteristics of Pt-germanide formed by laser annealing are comprehensively studied. Excellent morphology and sharp interface with Ge are achieved by laser annealed Pt-germanide, along with extremely low hole barrier height of 0.08 eV, showing that Pt-germanide by laser annealing is a promising approach for high-performance conventional self-aligned metal-oxide-semiconductor field-effect transistor application. The feasibility of Pt-germanide Schottky Source/Drain transistor by laser annealing integrated with chemical vapor deposition HfO₂/TaN gate stack is also demonstrated.

Original language	English
Pages (from-to)	2548-2550
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	47
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.2548
State	Published - 25 Apr 2008
Externally published	Yes

Keywords

Ge MOSFET
Germanide
High-k dielectric
Laser annealing
Schottky

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10.1143/JJAP.47.2548

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Li, R., Sung-Joo, L. E. E., Hong, M. H., Chi, D. Z., & Kwong, D. L. (2008). Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO₂/Ge gate stack. Japanese Journal of Applied Physics, 47(4 PART 2), 2548-2550. https://doi.org/10.1143/JJAP.47.2548

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title = "Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack",

abstract = "The formation and characteristics of Pt-germanide formed by laser annealing are comprehensively studied. Excellent morphology and sharp interface with Ge are achieved by laser annealed Pt-germanide, along with extremely low hole barrier height of 0.08 eV, showing that Pt-germanide by laser annealing is a promising approach for high-performance conventional self-aligned metal-oxide-semiconductor field-effect transistor application. The feasibility of Pt-germanide Schottky Source/Drain transistor by laser annealing integrated with chemical vapor deposition HfO2/TaN gate stack is also demonstrated.",

keywords = "Ge MOSFET, Germanide, High-k dielectric, Laser annealing, Schottky",

author = "Rui Li and Sung-Joo, \{L. E.E.\} and Hong, \{Ming Hui\} and Chi, \{Dong Zhi\} and Kwong, \{Dim Lee\}",

year = "2008",

month = apr,

day = "25",

doi = "10.1143/JJAP.47.2548",

language = "English",

volume = "47",

pages = "2548--2550",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 PART 2",

}

Li, R, Sung-Joo, LEE, Hong, MH, Chi, DZ & Kwong, DL 2008, 'Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO₂/Ge gate stack', Japanese Journal of Applied Physics, vol. 47, no. 4 PART 2, pp. 2548-2550. https://doi.org/10.1143/JJAP.47.2548

Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO₂/Ge gate stack. / Li, Rui; Sung-Joo, L. E.E.; Hong, Ming Hui et al.
In: Japanese Journal of Applied Physics, Vol. 47, No. 4 PART 2, 25.04.2008, p. 2548-2550.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack

AU - Li, Rui

AU - Sung-Joo, L. E.E.

AU - Hong, Ming Hui

AU - Chi, Dong Zhi

AU - Kwong, Dim Lee

PY - 2008/4/25

Y1 - 2008/4/25

N2 - The formation and characteristics of Pt-germanide formed by laser annealing are comprehensively studied. Excellent morphology and sharp interface with Ge are achieved by laser annealed Pt-germanide, along with extremely low hole barrier height of 0.08 eV, showing that Pt-germanide by laser annealing is a promising approach for high-performance conventional self-aligned metal-oxide-semiconductor field-effect transistor application. The feasibility of Pt-germanide Schottky Source/Drain transistor by laser annealing integrated with chemical vapor deposition HfO2/TaN gate stack is also demonstrated.

AB - The formation and characteristics of Pt-germanide formed by laser annealing are comprehensively studied. Excellent morphology and sharp interface with Ge are achieved by laser annealed Pt-germanide, along with extremely low hole barrier height of 0.08 eV, showing that Pt-germanide by laser annealing is a promising approach for high-performance conventional self-aligned metal-oxide-semiconductor field-effect transistor application. The feasibility of Pt-germanide Schottky Source/Drain transistor by laser annealing integrated with chemical vapor deposition HfO2/TaN gate stack is also demonstrated.

KW - Ge MOSFET

KW - Germanide

KW - High-k dielectric

KW - Laser annealing

KW - Schottky

UR - https://www.scopus.com/pages/publications/54249092918

U2 - 10.1143/JJAP.47.2548

DO - 10.1143/JJAP.47.2548

M3 - Article

AN - SCOPUS:54249092918

SN - 0021-4922

VL - 47

SP - 2548

EP - 2550

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 PART 2

ER -

Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO₂/Ge gate stack

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Keywords

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