Properties of SiOxNy thin film deposited by low temperature plasma enhanced chemical vapor deposition using TEOS-NH3-O2-N2 gas mixtures
- J. H. Lee
- , C. H. Jeong
- , J. T. Lim
- , N. G. Jo
- , S. J. Kyung
- , G. Y. Yeom
- Sungkyunkwan University
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