Properties of hafnium-aluminum-zinc-oxide thin films for the application of oxide-transistors

Sang Hyuk Lee; Hyun Sik Jun; Ju Hee Park; Won Kim; Saeroonter Oh; Jin Seok Park

doi:10.1016/j.tsf.2016.08.075

Properties of hafnium-aluminum-zinc-oxide thin films for the application of oxide-transistors

Sang Hyuk Lee, Hyun Sik Jun, Ju Hee Park, Won Kim, Saeroonter Oh, Jin Seok Park

Hanyang University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Hafnium-aluminum zinc oxide (HAZO) films as an active layer of oxide-transistors with different hafnium (Hf) contents were deposited via co-sputtering of separate targets. The effects of the sputtering power during co-sputtering on the structural, optical, electrical, and chemical properties of the HAZO films were examined. As the sputtering power increased, the structure of the HAZO films changed from polycrystalline to amorphous, and the Hf[sbnd]O bonds in the HAZO films increased, but the Zn[sbnd]O bonds decreased. Also, a bottom-gate-type thin-film transistor (TFT) using the HAZO film as its channel layer was fabricated and characterized. The TFTs using HAZO layer at room temperature as channel layer exhibited the device characteristics, such as a field effect mobility of 0.45 cm²/V·s, a threshold voltage of 17.18 V, a subthreshold swing of 0.85 V/decade, an on/off current ratio of 3.68 × 10⁷, and a visible transmittance of 82.7%. It was discovered that the changes of the electrical characteristics of the HAZO TFTs were closely related to the changes of the Zn[sbnd]O/Hf[sbnd]O bonding ratio.

Original language	English
Pages (from-to)	82-87
Number of pages	6
Journal	Thin Solid Films
Volume	620
DOIs	https://doi.org/10.1016/j.tsf.2016.08.075
State	Published - 1 Dec 2016
Externally published	Yes

Keywords

Chemical bonding
Co-sputtering
Electrical property
Hafnium-aluminum-zinc-oxide (HAZO)
Optical property
Sputtering power
Structural property
Thin film transistors (TFTs)

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10.1016/j.tsf.2016.08.075

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@article{8e6d2e35924540b795ba92847b6a891b,

title = "Properties of hafnium-aluminum-zinc-oxide thin films for the application of oxide-transistors",

abstract = "Hafnium-aluminum zinc oxide (HAZO) films as an active layer of oxide-transistors with different hafnium (Hf) contents were deposited via co-sputtering of separate targets. The effects of the sputtering power during co-sputtering on the structural, optical, electrical, and chemical properties of the HAZO films were examined. As the sputtering power increased, the structure of the HAZO films changed from polycrystalline to amorphous, and the Hf[sbnd]O bonds in the HAZO films increased, but the Zn[sbnd]O bonds decreased. Also, a bottom-gate-type thin-film transistor (TFT) using the HAZO film as its channel layer was fabricated and characterized. The TFTs using HAZO layer at room temperature as channel layer exhibited the device characteristics, such as a field effect mobility of 0.45 cm2/V·s, a threshold voltage of 17.18 V, a subthreshold swing of 0.85 V/decade, an on/off current ratio of 3.68 × 107, and a visible transmittance of 82.7\%. It was discovered that the changes of the electrical characteristics of the HAZO TFTs were closely related to the changes of the Zn[sbnd]O/Hf[sbnd]O bonding ratio.",

keywords = "Chemical bonding, Co-sputtering, Electrical property, Hafnium-aluminum-zinc-oxide (HAZO), Optical property, Sputtering power, Structural property, Thin film transistors (TFTs)",

author = "Lee, \{Sang Hyuk\} and Jun, \{Hyun Sik\} and Park, \{Ju Hee\} and Won Kim and Saeroonter Oh and Park, \{Jin Seok\}",

note = "Publisher Copyright: {\textcopyright} 2016",

year = "2016",

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doi = "10.1016/j.tsf.2016.08.075",

language = "English",

volume = "620",

pages = "82--87",

journal = "Thin Solid Films",

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T1 - Properties of hafnium-aluminum-zinc-oxide thin films for the application of oxide-transistors

AU - Lee, Sang Hyuk

AU - Jun, Hyun Sik

AU - Park, Ju Hee

AU - Kim, Won

AU - Oh, Saeroonter

AU - Park, Jin Seok

PY - 2016/12/1

Y1 - 2016/12/1

N2 - Hafnium-aluminum zinc oxide (HAZO) films as an active layer of oxide-transistors with different hafnium (Hf) contents were deposited via co-sputtering of separate targets. The effects of the sputtering power during co-sputtering on the structural, optical, electrical, and chemical properties of the HAZO films were examined. As the sputtering power increased, the structure of the HAZO films changed from polycrystalline to amorphous, and the Hf[sbnd]O bonds in the HAZO films increased, but the Zn[sbnd]O bonds decreased. Also, a bottom-gate-type thin-film transistor (TFT) using the HAZO film as its channel layer was fabricated and characterized. The TFTs using HAZO layer at room temperature as channel layer exhibited the device characteristics, such as a field effect mobility of 0.45 cm2/V·s, a threshold voltage of 17.18 V, a subthreshold swing of 0.85 V/decade, an on/off current ratio of 3.68 × 107, and a visible transmittance of 82.7%. It was discovered that the changes of the electrical characteristics of the HAZO TFTs were closely related to the changes of the Zn[sbnd]O/Hf[sbnd]O bonding ratio.

AB - Hafnium-aluminum zinc oxide (HAZO) films as an active layer of oxide-transistors with different hafnium (Hf) contents were deposited via co-sputtering of separate targets. The effects of the sputtering power during co-sputtering on the structural, optical, electrical, and chemical properties of the HAZO films were examined. As the sputtering power increased, the structure of the HAZO films changed from polycrystalline to amorphous, and the Hf[sbnd]O bonds in the HAZO films increased, but the Zn[sbnd]O bonds decreased. Also, a bottom-gate-type thin-film transistor (TFT) using the HAZO film as its channel layer was fabricated and characterized. The TFTs using HAZO layer at room temperature as channel layer exhibited the device characteristics, such as a field effect mobility of 0.45 cm2/V·s, a threshold voltage of 17.18 V, a subthreshold swing of 0.85 V/decade, an on/off current ratio of 3.68 × 107, and a visible transmittance of 82.7%. It was discovered that the changes of the electrical characteristics of the HAZO TFTs were closely related to the changes of the Zn[sbnd]O/Hf[sbnd]O bonding ratio.

KW - Chemical bonding

KW - Co-sputtering

KW - Electrical property

KW - Hafnium-aluminum-zinc-oxide (HAZO)

KW - Optical property

KW - Sputtering power

KW - Structural property

KW - Thin film transistors (TFTs)

UR - https://www.scopus.com/pages/publications/84991253735

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DO - 10.1016/j.tsf.2016.08.075

M3 - Article

AN - SCOPUS:84991253735

SN - 0040-6090

VL - 620

SP - 82

EP - 87

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Properties of hafnium-aluminum-zinc-oxide thin films for the application of oxide-transistors

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Keywords

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