Properties of a Surface-Gate-Controlled Two-Dimensional Electron Gas in Undoped GaAs/AlGaAs Heterostructures

Hyungkook Choi; Youngwoo Nam; Jae Hyun Lee; Seok Kyun Son

doi:10.3938/jkps.76.1083

Properties of a Surface-Gate-Controlled Two-Dimensional Electron Gas in Undoped GaAs/AlGaAs Heterostructures

Hyungkook Choi
, Youngwoo Nam
, Jae Hyun Lee
, Seok Kyun Son

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We studied the properties of electron transport in mesoscopic GaAs/AlGaAs heterostructure without any intentional dopants in which an external electric field defined the two-dimensional electron gas (2DEG). An electrically formed 2DEG without intentional doping offers many advantages because of the absence of high concentrations of charged scattering centers. We demonstrate that the electron concentration can be easily tuned by varying the gate voltage. This tunability was observed for a high-quality 2DEG with a carrier density ranging from 0.75 to 3.34 × 10¹¹ cm⁻², for which the corresponding mobility ranged from 0.26 to 2.93 × 10⁶ cm²V⁻¹s⁻¹. The mobility of the 2DEG is closely followed the experimental power law for high-mobility wafers, μ ∞ n_2D^0.7.

Original language	English
Pages (from-to)	1083-1087
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	76
Issue number	12
DOIs	https://doi.org/10.3938/jkps.76.1083
State	Published - 1 Jun 2020
Externally published	Yes

Keywords

GaAs/AlGaAs heterostructure
Two-dimensional electron gas
Undoped devices

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10.3938/jkps.76.1083

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title = "Properties of a Surface-Gate-Controlled Two-Dimensional Electron Gas in Undoped GaAs/AlGaAs Heterostructures",

abstract = "We studied the properties of electron transport in mesoscopic GaAs/AlGaAs heterostructure without any intentional dopants in which an external electric field defined the two-dimensional electron gas (2DEG). An electrically formed 2DEG without intentional doping offers many advantages because of the absence of high concentrations of charged scattering centers. We demonstrate that the electron concentration can be easily tuned by varying the gate voltage. This tunability was observed for a high-quality 2DEG with a carrier density ranging from 0.75 to 3.34 × 1011 cm−2, for which the corresponding mobility ranged from 0.26 to 2.93 × 106 cm2V−1s−1. The mobility of the 2DEG is closely followed the experimental power law for high-mobility wafers, μ ∞ n2D0.7.",

keywords = "GaAs/AlGaAs heterostructure, Two-dimensional electron gas, Undoped devices",

author = "Hyungkook Choi and Youngwoo Nam and Lee, \{Jae Hyun\} and Son, \{Seok Kyun\}",

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doi = "10.3938/jkps.76.1083",

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T1 - Properties of a Surface-Gate-Controlled Two-Dimensional Electron Gas in Undoped GaAs/AlGaAs Heterostructures

AU - Choi, Hyungkook

AU - Nam, Youngwoo

AU - Lee, Jae Hyun

AU - Son, Seok Kyun

PY - 2020/6/1

Y1 - 2020/6/1

N2 - We studied the properties of electron transport in mesoscopic GaAs/AlGaAs heterostructure without any intentional dopants in which an external electric field defined the two-dimensional electron gas (2DEG). An electrically formed 2DEG without intentional doping offers many advantages because of the absence of high concentrations of charged scattering centers. We demonstrate that the electron concentration can be easily tuned by varying the gate voltage. This tunability was observed for a high-quality 2DEG with a carrier density ranging from 0.75 to 3.34 × 1011 cm−2, for which the corresponding mobility ranged from 0.26 to 2.93 × 106 cm2V−1s−1. The mobility of the 2DEG is closely followed the experimental power law for high-mobility wafers, μ ∞ n2D0.7.

AB - We studied the properties of electron transport in mesoscopic GaAs/AlGaAs heterostructure without any intentional dopants in which an external electric field defined the two-dimensional electron gas (2DEG). An electrically formed 2DEG without intentional doping offers many advantages because of the absence of high concentrations of charged scattering centers. We demonstrate that the electron concentration can be easily tuned by varying the gate voltage. This tunability was observed for a high-quality 2DEG with a carrier density ranging from 0.75 to 3.34 × 1011 cm−2, for which the corresponding mobility ranged from 0.26 to 2.93 × 106 cm2V−1s−1. The mobility of the 2DEG is closely followed the experimental power law for high-mobility wafers, μ ∞ n2D0.7.

KW - GaAs/AlGaAs heterostructure

KW - Two-dimensional electron gas

KW - Undoped devices

UR - https://www.scopus.com/pages/publications/85087218087

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DO - 10.3938/jkps.76.1083

M3 - Article

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JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 12

ER -

Properties of a Surface-Gate-Controlled Two-Dimensional Electron Gas in Undoped GaAs/AlGaAs Heterostructures

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Keywords

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