Abstract
This article presents a simple complementary metal-oxide-semiconductor (CMOS) ring oscillator using a voltage-controlled delay and RS-latch, including a compensation circuit for the process and temperature variations.The compensation circuit, added to the original bias circuit, is a simple current sinker which is referenced through a current mirror circuit. The proposed oscillator was designed and implemented using a 0.13 μm CMOS process. The oscillator exhibited a significantly improved frequency variation of ±4.25% for a wide temperature range of from -40 to 80°C. Without the compensation circuit, the variation would have been ±13.39% from the center frequency of 2.33 MHz. The oscillator also showed a low sensitivity of 0.084% to process variation, according to a Monte-Carlo simulation with 1000 iterations.
| Original language | English |
|---|---|
| Pages (from-to) | 160-163 |
| Number of pages | 4 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 54 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2012 |
Keywords
- CMOS
- oscillator
- temperature compensation