Pressure dependence and micro-hillock formation of ZnO thin films grown at low temperature by MOCVD

Dong Chan Kim; Bo Hyun Kong; Sang Ouk Jun; Hyung Koun Cho; Dong Jun Park; Jeong Yong Lee

doi:10.1016/j.tsf.2007.07.123

Pressure dependence and micro-hillock formation of ZnO thin films grown at low temperature by MOCVD

Dong Chan Kim, Bo Hyun Kong, Sang Ouk Jun, Hyung Koun Cho, Dong Jun Park, Jeong Yong Lee

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

ZnO thin films were grown at a reduced growth temperature on a Si substrate by low-pressure metalorganic chemical vapor deposition. The effects of the reactor pressures and the formation of micro-hillocks on the characteristics of the film were investigated. The ZnO films grown at 210 °C showed mass-transport limited growth behavior and a faceted surface morphology. It was found that the effect of the micro-hillocks on the structural, optical, and electrical properties can be ignored. While the sample grown at 10 Torr showed transparent conductive oxide properties, the sample grown at 3 Torr showed suitable characteristics for use as an ultraviolet emitter.

Original language	English
Pages (from-to)	5562-5566
Number of pages	5
Journal	Thin Solid Films
Volume	516
Issue number	16
DOIs	https://doi.org/10.1016/j.tsf.2007.07.123
State	Published - 30 Jun 2008

Keywords

Low temperature
Micro-hillock
MOCVD
ZnO

Access to Document

10.1016/j.tsf.2007.07.123

Cite this

@article{90995ac97f554c00994b4c620eef1c9e,

title = "Pressure dependence and micro-hillock formation of ZnO thin films grown at low temperature by MOCVD",

abstract = "ZnO thin films were grown at a reduced growth temperature on a Si substrate by low-pressure metalorganic chemical vapor deposition. The effects of the reactor pressures and the formation of micro-hillocks on the characteristics of the film were investigated. The ZnO films grown at 210 °C showed mass-transport limited growth behavior and a faceted surface morphology. It was found that the effect of the micro-hillocks on the structural, optical, and electrical properties can be ignored. While the sample grown at 10 Torr showed transparent conductive oxide properties, the sample grown at 3 Torr showed suitable characteristics for use as an ultraviolet emitter.",

keywords = "Low temperature, Micro-hillock, MOCVD, ZnO",

author = "Kim, \{Dong Chan\} and Kong, \{Bo Hyun\} and Jun, \{Sang Ouk\} and Cho, \{Hyung Koun\} and Park, \{Dong Jun\} and Lee, \{Jeong Yong\}",

year = "2008",

month = jun,

day = "30",

doi = "10.1016/j.tsf.2007.07.123",

language = "English",

volume = "516",

pages = "5562--5566",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "16",

}

TY - JOUR

T1 - Pressure dependence and micro-hillock formation of ZnO thin films grown at low temperature by MOCVD

AU - Kim, Dong Chan

AU - Kong, Bo Hyun

AU - Jun, Sang Ouk

AU - Cho, Hyung Koun

AU - Park, Dong Jun

AU - Lee, Jeong Yong

PY - 2008/6/30

Y1 - 2008/6/30

N2 - ZnO thin films were grown at a reduced growth temperature on a Si substrate by low-pressure metalorganic chemical vapor deposition. The effects of the reactor pressures and the formation of micro-hillocks on the characteristics of the film were investigated. The ZnO films grown at 210 °C showed mass-transport limited growth behavior and a faceted surface morphology. It was found that the effect of the micro-hillocks on the structural, optical, and electrical properties can be ignored. While the sample grown at 10 Torr showed transparent conductive oxide properties, the sample grown at 3 Torr showed suitable characteristics for use as an ultraviolet emitter.

AB - ZnO thin films were grown at a reduced growth temperature on a Si substrate by low-pressure metalorganic chemical vapor deposition. The effects of the reactor pressures and the formation of micro-hillocks on the characteristics of the film were investigated. The ZnO films grown at 210 °C showed mass-transport limited growth behavior and a faceted surface morphology. It was found that the effect of the micro-hillocks on the structural, optical, and electrical properties can be ignored. While the sample grown at 10 Torr showed transparent conductive oxide properties, the sample grown at 3 Torr showed suitable characteristics for use as an ultraviolet emitter.

KW - Low temperature

KW - Micro-hillock

KW - MOCVD

KW - ZnO

UR - https://www.scopus.com/pages/publications/43949087495

U2 - 10.1016/j.tsf.2007.07.123

DO - 10.1016/j.tsf.2007.07.123

M3 - Article

AN - SCOPUS:43949087495

SN - 0040-6090

VL - 516

SP - 5562

EP - 5566

JO - Thin Solid Films

JF - Thin Solid Films

IS - 16

ER -

Pressure dependence and micro-hillock formation of ZnO thin films grown at low temperature by MOCVD

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this