Preparation of MgO films on GaAs by metalorganic chemical vapor deposition

J. H. Boo; K. S. Yu; W. Koh; Y. Kim

doi:10.1016/0167-577X(95)00227-8

Preparation of MgO films on GaAs by metalorganic chemical vapor deposition

J. H. Boo
, K. S. Yu
, W. Koh
, Y. Kim

Korea Research Institute of Chemical Technology

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

MgO films have been prepared on GaAs(100) substrates by low-pressure metalorganic chemical vapor deposition using Mg(tmhd)₂ as a precursor and oxygen as a carrier gas, where tmhd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Polycrystalline MgO films oriented mainly in the [100] direction were obtained at the substrate temperature of 300°C. However, [110] oriented growth began to appear as the deposition temperature was increased. Deposition at 500°C was found to induce breaking of the GaAs surfaces.

Original language	English
Pages (from-to)	233-236
Number of pages	4
Journal	Materials Letters
Volume	26
Issue number	4-5
DOIs	https://doi.org/10.1016/0167-577X(95)00227-8
State	Published - Mar 1996
Externally published	Yes

Keywords

CVD
Gaas substrates
Metalorganic
MgO films

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10.1016/0167-577X(95)00227-8

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@article{a4b7b15ed7194c40937c19be728a8cd6,

title = "Preparation of MgO films on GaAs by metalorganic chemical vapor deposition",

abstract = "MgO films have been prepared on GaAs(100) substrates by low-pressure metalorganic chemical vapor deposition using Mg(tmhd)2 as a precursor and oxygen as a carrier gas, where tmhd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Polycrystalline MgO films oriented mainly in the [100] direction were obtained at the substrate temperature of 300°C. However, [110] oriented growth began to appear as the deposition temperature was increased. Deposition at 500°C was found to induce breaking of the GaAs surfaces.",

keywords = "CVD, Gaas substrates, Metalorganic, MgO films",

author = "Boo, \{J. H.\} and Yu, \{K. S.\} and W. Koh and Y. Kim",

year = "1996",

month = mar,

doi = "10.1016/0167-577X(95)00227-8",

language = "English",

volume = "26",

pages = "233--236",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

number = "4-5",

}

TY - JOUR

T1 - Preparation of MgO films on GaAs by metalorganic chemical vapor deposition

AU - Boo, J. H.

AU - Yu, K. S.

AU - Koh, W.

AU - Kim, Y.

PY - 1996/3

Y1 - 1996/3

N2 - MgO films have been prepared on GaAs(100) substrates by low-pressure metalorganic chemical vapor deposition using Mg(tmhd)2 as a precursor and oxygen as a carrier gas, where tmhd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Polycrystalline MgO films oriented mainly in the [100] direction were obtained at the substrate temperature of 300°C. However, [110] oriented growth began to appear as the deposition temperature was increased. Deposition at 500°C was found to induce breaking of the GaAs surfaces.

AB - MgO films have been prepared on GaAs(100) substrates by low-pressure metalorganic chemical vapor deposition using Mg(tmhd)2 as a precursor and oxygen as a carrier gas, where tmhd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Polycrystalline MgO films oriented mainly in the [100] direction were obtained at the substrate temperature of 300°C. However, [110] oriented growth began to appear as the deposition temperature was increased. Deposition at 500°C was found to induce breaking of the GaAs surfaces.

KW - CVD

KW - Gaas substrates

KW - Metalorganic

KW - MgO films

UR - https://www.scopus.com/pages/publications/0030105740

U2 - 10.1016/0167-577X(95)00227-8

DO - 10.1016/0167-577X(95)00227-8

M3 - Article

AN - SCOPUS:0030105740

SN - 0167-577X

VL - 26

SP - 233

EP - 236

JO - Materials Letters

JF - Materials Letters

IS - 4-5

ER -

Preparation of MgO films on GaAs by metalorganic chemical vapor deposition

Abstract

Keywords

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