TY - GEN
T1 - Prediction of channel thermal noise in twin silicon nanowire MOSFET (TSNWFET)
AU - Lee, Jaehong
AU - Jeon, Jongwook
AU - Kim, Junsoo
AU - Park, Byung Gook
AU - Lee, Jong Duk
PY - 2008
Y1 - 2008
N2 - In this work, channel thermal noise in the twin silicon nanowire MOSFET (TSNWFET) is predicted using analytic thermal noise model taking into account short channel effects. TSNWFET used in this work has 40 run gate length, 5 nm radius of silicon wire, and the 3.5 nm of gate oxide. Predicted thermal noise is compared with that of the planar MOSFET using various processes.
AB - In this work, channel thermal noise in the twin silicon nanowire MOSFET (TSNWFET) is predicted using analytic thermal noise model taking into account short channel effects. TSNWFET used in this work has 40 run gate length, 5 nm radius of silicon wire, and the 3.5 nm of gate oxide. Predicted thermal noise is compared with that of the planar MOSFET using various processes.
UR - https://www.scopus.com/pages/publications/60649086068
U2 - 10.1109/ICSICT.2008.4734463
DO - 10.1109/ICSICT.2008.4734463
M3 - Conference contribution
AN - SCOPUS:60649086068
SN - 9781424421855
T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
SP - 61
EP - 63
BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Y2 - 20 October 2008 through 23 October 2008
ER -