Precise depth control and low-damage atomic-layer etching of HfO 2using BCl3 and Ar neutral beam

S. D. Park; W. S. Lim; B. J. Park; H. C. Lee; J. W. Bae; G. Y. Yeom

doi:10.1149/1.2832427

Precise depth control and low-damage atomic-layer etching of HfO ₂using BCl₃ and Ar neutral beam

S. D. Park
, W. S. Lim
, B. J. Park
, H. C. Lee
, J. W. Bae
, G. Y. Yeom

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The etch characteristics of HfO2 by atomic-layer etching (ALET) were investigated using a BCl3 Ar neutral beam. The effect of ALET on surface modification and etch-depth control was also examined. Self-limited etching of HfO2 could be obtained using BCl3 ALET. This was attributed to the absorption of BCl3 by the Langmuir isotherm during the absorption stage and the vaporization of hafnium-chlorides/boron oxychlorides formed on the surface during the desorption stage. In addition, the surface composition of HfO2 was not altered by etching during ALET.

Original language	English
Pages (from-to)	H71-H73
Journal	Electrochemical and Solid-State Letters
Volume	11
Issue number	4
DOIs	https://doi.org/10.1149/1.2832427
State	Published - 2008

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title = "Precise depth control and low-damage atomic-layer etching of HfO 2using BCl3 and Ar neutral beam",

abstract = "The etch characteristics of HfO2 by atomic-layer etching (ALET) were investigated using a BCl3 Ar neutral beam. The effect of ALET on surface modification and etch-depth control was also examined. Self-limited etching of HfO2 could be obtained using BCl3 ALET. This was attributed to the absorption of BCl3 by the Langmuir isotherm during the absorption stage and the vaporization of hafnium-chlorides/boron oxychlorides formed on the surface during the desorption stage. In addition, the surface composition of HfO2 was not altered by etching during ALET.",

author = "Park, \{S. D.\} and Lim, \{W. S.\} and Park, \{B. J.\} and Lee, \{H. C.\} and Bae, \{J. W.\} and Yeom, \{G. Y.\}",

year = "2008",

doi = "10.1149/1.2832427",

language = "English",

volume = "11",

pages = "H71--H73",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

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TY - JOUR

T1 - Precise depth control and low-damage atomic-layer etching of HfO 2using BCl3 and Ar neutral beam

AU - Park, S. D.

AU - Lim, W. S.

AU - Park, B. J.

AU - Lee, H. C.

AU - Bae, J. W.

AU - Yeom, G. Y.

PY - 2008

Y1 - 2008

N2 - The etch characteristics of HfO2 by atomic-layer etching (ALET) were investigated using a BCl3 Ar neutral beam. The effect of ALET on surface modification and etch-depth control was also examined. Self-limited etching of HfO2 could be obtained using BCl3 ALET. This was attributed to the absorption of BCl3 by the Langmuir isotherm during the absorption stage and the vaporization of hafnium-chlorides/boron oxychlorides formed on the surface during the desorption stage. In addition, the surface composition of HfO2 was not altered by etching during ALET.

AB - The etch characteristics of HfO2 by atomic-layer etching (ALET) were investigated using a BCl3 Ar neutral beam. The effect of ALET on surface modification and etch-depth control was also examined. Self-limited etching of HfO2 could be obtained using BCl3 ALET. This was attributed to the absorption of BCl3 by the Langmuir isotherm during the absorption stage and the vaporization of hafnium-chlorides/boron oxychlorides formed on the surface during the desorption stage. In addition, the surface composition of HfO2 was not altered by etching during ALET.

UR - https://www.scopus.com/pages/publications/39349103049

U2 - 10.1149/1.2832427

DO - 10.1149/1.2832427

M3 - Article

AN - SCOPUS:39349103049

SN - 1099-0062

VL - 11

SP - H71-H73

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 4

ER -

Precise depth control and low-damage atomic-layer etching of HfO ₂using BCl₃ and Ar neutral beam

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