Potential structure of c-Si bottom sub-cell in bifacial four-terminal III-V//c-Si multijunction devices

Duy Phong Pham; Seungyong Han; Minh Phuong Nguyen; Hyun Beom Shin; Ho Kwan Kang; Youngkuk Kim; Junsin Yi

doi:10.1016/j.solener.2023.04.015

Potential structure of c-Si bottom sub-cell in bifacial four-terminal III-V//c-Si multijunction devices

Duy Phong Pham
, Seungyong Han
, Minh Phuong Nguyen
, Hyun Beom Shin
, Ho Kwan Kang
, Youngkuk Kim
, Junsin Yi

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We propose a structural innovation for a four-terminal III-V//crystalline silicon (c-Si) multijunction (MJ) device under bifacial illumination. The top cell is a double-junction gallium indium phosphide (GaInP)/gallium arsenide (GaAs) cell structure, and the bottom cell is a tunnel oxide passivating contact (TOPCon) structure with a boron-diffusion emitter and a wide-gap polysilicon oxide (poly-SiO_x) passivating rear contact. To maximise the albedo-reflectance light transmitted into the c-Si absorber, the wide-gap poly-SiO_x passivating contact is intended to replace the conventional narrow-gap polysilicon (poly-Si) passivating contact at the rear of the TOPCon. With an extra 0.25-sun illuminated light at the back, the bottom cell's conversion performance improves by 14.5%. When compared to mono-illumination, bifacial illumination increases the overall efficiency of the MJ device by 2.67%. The design shows great potential for enhancing further the conversion performance of the bifacial GaInP/GaAs//TOPCon MJ devices using the wide-gap poly-SiO_x passivating rear contacts.

Original language	English
Pages (from-to)	10-17
Number of pages	8
Journal	Solar Energy
Volume	257
DOIs	https://doi.org/10.1016/j.solener.2023.04.015
State	Published - Jun 2023

Keywords

Bifacial illumination
III-V//c-Si multijunction solar cells
TOPCon solar cells
Wide-gap materials

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solener.2023.04.015

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@article{251dbfc145474fbf9ef0fa7130dcf9ee,

title = "Potential structure of c-Si bottom sub-cell in bifacial four-terminal III-V//c-Si multijunction devices",

abstract = "We propose a structural innovation for a four-terminal III-V//crystalline silicon (c-Si) multijunction (MJ) device under bifacial illumination. The top cell is a double-junction gallium indium phosphide (GaInP)/gallium arsenide (GaAs) cell structure, and the bottom cell is a tunnel oxide passivating contact (TOPCon) structure with a boron-diffusion emitter and a wide-gap polysilicon oxide (poly-SiOx) passivating rear contact. To maximise the albedo-reflectance light transmitted into the c-Si absorber, the wide-gap poly-SiOx passivating contact is intended to replace the conventional narrow-gap polysilicon (poly-Si) passivating contact at the rear of the TOPCon. With an extra 0.25-sun illuminated light at the back, the bottom cell's conversion performance improves by 14.5\%. When compared to mono-illumination, bifacial illumination increases the overall efficiency of the MJ device by 2.67\%. The design shows great potential for enhancing further the conversion performance of the bifacial GaInP/GaAs//TOPCon MJ devices using the wide-gap poly-SiOx passivating rear contacts.",

keywords = "Bifacial illumination, III-V//c-Si multijunction solar cells, TOPCon solar cells, Wide-gap materials",

author = "\{Phong Pham\}, Duy and Seungyong Han and \{Phuong Nguyen\}, Minh and Shin, \{Hyun Beom\} and \{Kwan Kang\}, Ho and Youngkuk Kim and Junsin Yi",

note = "Publisher Copyright: {\textcopyright} 2023 International Solar Energy Society",

year = "2023",

month = jun,

doi = "10.1016/j.solener.2023.04.015",

language = "English",

volume = "257",

pages = "10--17",

journal = "Solar Energy",

issn = "0038-092X",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Potential structure of c-Si bottom sub-cell in bifacial four-terminal III-V//c-Si multijunction devices

AU - Phong Pham, Duy

AU - Han, Seungyong

AU - Phuong Nguyen, Minh

AU - Shin, Hyun Beom

AU - Kwan Kang, Ho

AU - Kim, Youngkuk

AU - Yi, Junsin

PY - 2023/6

Y1 - 2023/6

N2 - We propose a structural innovation for a four-terminal III-V//crystalline silicon (c-Si) multijunction (MJ) device under bifacial illumination. The top cell is a double-junction gallium indium phosphide (GaInP)/gallium arsenide (GaAs) cell structure, and the bottom cell is a tunnel oxide passivating contact (TOPCon) structure with a boron-diffusion emitter and a wide-gap polysilicon oxide (poly-SiOx) passivating rear contact. To maximise the albedo-reflectance light transmitted into the c-Si absorber, the wide-gap poly-SiOx passivating contact is intended to replace the conventional narrow-gap polysilicon (poly-Si) passivating contact at the rear of the TOPCon. With an extra 0.25-sun illuminated light at the back, the bottom cell's conversion performance improves by 14.5%. When compared to mono-illumination, bifacial illumination increases the overall efficiency of the MJ device by 2.67%. The design shows great potential for enhancing further the conversion performance of the bifacial GaInP/GaAs//TOPCon MJ devices using the wide-gap poly-SiOx passivating rear contacts.

AB - We propose a structural innovation for a four-terminal III-V//crystalline silicon (c-Si) multijunction (MJ) device under bifacial illumination. The top cell is a double-junction gallium indium phosphide (GaInP)/gallium arsenide (GaAs) cell structure, and the bottom cell is a tunnel oxide passivating contact (TOPCon) structure with a boron-diffusion emitter and a wide-gap polysilicon oxide (poly-SiOx) passivating rear contact. To maximise the albedo-reflectance light transmitted into the c-Si absorber, the wide-gap poly-SiOx passivating contact is intended to replace the conventional narrow-gap polysilicon (poly-Si) passivating contact at the rear of the TOPCon. With an extra 0.25-sun illuminated light at the back, the bottom cell's conversion performance improves by 14.5%. When compared to mono-illumination, bifacial illumination increases the overall efficiency of the MJ device by 2.67%. The design shows great potential for enhancing further the conversion performance of the bifacial GaInP/GaAs//TOPCon MJ devices using the wide-gap poly-SiOx passivating rear contacts.

KW - Bifacial illumination

KW - III-V//c-Si multijunction solar cells

KW - TOPCon solar cells

KW - Wide-gap materials

UR - https://www.scopus.com/pages/publications/85152742455

U2 - 10.1016/j.solener.2023.04.015

DO - 10.1016/j.solener.2023.04.015

M3 - Article

AN - SCOPUS:85152742455

SN - 0038-092X

VL - 257

SP - 10

EP - 17

JO - Solar Energy

JF - Solar Energy

ER -

Potential structure of c-Si bottom sub-cell in bifacial four-terminal III-V//c-Si multijunction devices

Abstract

Keywords

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