@inproceedings{fcae9cc031f64ad19105bf145098a92b,
title = "Post-annealing effect of SiON thin film in air",
abstract = "About 2μm-thick, amorphous SiON thin films were deposited by the PECVD method, and heated up to 1000°C in air to study the post-annealing effect on the composition and structure of the SiON film. SiON had a strong SiO 2 binding energy with a weak N-binding, so that air-annealing resulted in nitrogen escape from the film. The inwardly transported oxygen from the atmosphere was simply supersaturated inside the annealed, amorphous SiON thin film.",
keywords = "Annealing, Sion, Thin film",
author = "Lee, \{D. B.\} and Yoon, \{D. H.\}",
year = "2007",
doi = "10.4028/3-908451-31-0.463",
language = "English",
isbn = "3908451310",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
number = "PART 1",
pages = "463--466",
booktitle = "Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia",
edition = "PART 1",
note = "IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 ; Conference date: 10-09-2006 Through 14-09-2006",
}