Positive gate bias stress instability of carbon nanotube thin film transistors

Sang Won Lee; Si Young Lee; Seong Chu Lim; Young Dong Kwon; Joo Sun Yoon; Keehan Uh; Young Hee Lee

doi:10.1063/1.4740084

Positive gate bias stress instability of carbon nanotube thin film transistors

Sang Won Lee
, Si Young Lee
, Seong Chu Lim
, Young Dong Kwon
, Joo Sun Yoon
, Keehan Uh
, Young Hee Lee

Sungkyunkwan University
Samsung

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

The effect of positive gate bias stress (PGBS) on random network carbon nanotube-thin film transistor (CNT-TFT) stability on SiO ₂ and HfO ₂ oxides was investigated with different gate bias stresses and times. CNT-TFTs showed a logarithmic positive threshold voltage shift (ΔV _th) with time for a PGBS, following a stretched exponential model. Although the saturated ΔV _th was larger on SiO ₂ than on HfO ₂, CNT device using SiO ₂ gate insulator recovered their original characteristics after removal of the stress at room temperature without additional thermal and bias annealing. The CNT-TFTs were found to be more tenable than conventional Si devices against PGBS.

Original language	English
Article number	053504
Journal	Applied Physics Letters
Volume	101
Issue number	5
DOIs	https://doi.org/10.1063/1.4740084
State	Published - 30 Jul 2012

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10.1063/1.4740084

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title = "Positive gate bias stress instability of carbon nanotube thin film transistors",

abstract = "The effect of positive gate bias stress (PGBS) on random network carbon nanotube-thin film transistor (CNT-TFT) stability on SiO 2 and HfO 2 oxides was investigated with different gate bias stresses and times. CNT-TFTs showed a logarithmic positive threshold voltage shift (ΔV th) with time for a PGBS, following a stretched exponential model. Although the saturated ΔV th was larger on SiO 2 than on HfO 2, CNT device using SiO 2 gate insulator recovered their original characteristics after removal of the stress at room temperature without additional thermal and bias annealing. The CNT-TFTs were found to be more tenable than conventional Si devices against PGBS.",

author = "Lee, \{Sang Won\} and Lee, \{Si Young\} and Lim, \{Seong Chu\} and Kwon, \{Young Dong\} and Yoon, \{Joo Sun\} and Keehan Uh and Lee, \{Young Hee\}",

year = "2012",

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doi = "10.1063/1.4740084",

language = "English",

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T1 - Positive gate bias stress instability of carbon nanotube thin film transistors

AU - Lee, Sang Won

AU - Lee, Si Young

AU - Lim, Seong Chu

AU - Kwon, Young Dong

AU - Yoon, Joo Sun

AU - Uh, Keehan

AU - Lee, Young Hee

PY - 2012/7/30

Y1 - 2012/7/30

N2 - The effect of positive gate bias stress (PGBS) on random network carbon nanotube-thin film transistor (CNT-TFT) stability on SiO 2 and HfO 2 oxides was investigated with different gate bias stresses and times. CNT-TFTs showed a logarithmic positive threshold voltage shift (ΔV th) with time for a PGBS, following a stretched exponential model. Although the saturated ΔV th was larger on SiO 2 than on HfO 2, CNT device using SiO 2 gate insulator recovered their original characteristics after removal of the stress at room temperature without additional thermal and bias annealing. The CNT-TFTs were found to be more tenable than conventional Si devices against PGBS.

AB - The effect of positive gate bias stress (PGBS) on random network carbon nanotube-thin film transistor (CNT-TFT) stability on SiO 2 and HfO 2 oxides was investigated with different gate bias stresses and times. CNT-TFTs showed a logarithmic positive threshold voltage shift (ΔV th) with time for a PGBS, following a stretched exponential model. Although the saturated ΔV th was larger on SiO 2 than on HfO 2, CNT device using SiO 2 gate insulator recovered their original characteristics after removal of the stress at room temperature without additional thermal and bias annealing. The CNT-TFTs were found to be more tenable than conventional Si devices against PGBS.

UR - https://www.scopus.com/pages/publications/84864660584

U2 - 10.1063/1.4740084

DO - 10.1063/1.4740084

M3 - Article

AN - SCOPUS:84864660584

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053504

ER -

Positive gate bias stress instability of carbon nanotube thin film transistors

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