Abstract
In this paper, the pressure-sensing property of porous silicon is reported. The motivation behind this study is to modify silicon to make it more sensitive in the low-pressure range. The sensitivity of a porous silicon membrane towards pressure has been studied and observed to be three times greater than that of mono-crystalline silicon, since there is the possibility of improvement in piezoresistance due to quantum confinement in the porous silicon nanostructure. The piezoresistive coefficient of porous silicon has also been estimated from experimental observations and stress calculations.
| Original language | English |
|---|---|
| Pages (from-to) | S450-S453 |
| Journal | Journal of the Korean Physical Society |
| Volume | 47 |
| Issue number | SUPPL. 3 |
| State | Published - Nov 2005 |
Keywords
- Piezoresistive coefficient
- Porous silicon
- Pressure sensing