Polyethylenimine Ethoxylated-Mediated All-Solution-Processed High-Performance Flexible Inverted Quantum Dot-Light-Emitting Device

Daekyoung Kim; Yan Fu; Sunho Kim; Woosuk Lee; Ki Heon Lee; Ho Kyoon Chung; Hoo Jeong Lee; Heesun Yang; Heeyeop Chae

doi:10.1021/acsnano.6b08142

Polyethylenimine Ethoxylated-Mediated All-Solution-Processed High-Performance Flexible Inverted Quantum Dot-Light-Emitting Device

Daekyoung Kim, Yan Fu, Sunho Kim, Woosuk Lee, Ki Heon Lee, Ho Kyoon Chung, Hoo Jeong Lee, Heesun Yang, Heeyeop Chae

Research output: Contribution to journal › Article › peer-review

202 Scopus citations

Abstract

We report on an all-solution-processed fabrication of highly efficient green quantum dot-light-emitting diodes (QLEDs) with an inverted architecture, where an interfacial polymeric surface modifier of polyethylenimine ethoxylated (PEIE) is inserted between a quantum dot (QD) emitting layer (EML) and a hole transport layer (HTL), and a MoO_x hole injection layer is solution deposited on top of the HTL. Among the inverted QLEDs with varied PEIE thicknesses, the device with an optimal PEIE thickness of 15.5 nm shows record maximum efficiency values of 65.3 cd/A in current efficiency and 15.6% in external quantum efficiency (EQE). All-solution-processed fabrication of inverted QLED is further implemented on a flexible platform by developing a high-performing transparent conducting composite film of ZnO nanoparticles-overcoated on Ag nanowires. The resulting flexible inverted device possesses 35.1 cd/A in current efficiency and 8.4% in EQE, which are also the highest efficiency values ever reported in flexible QLEDs.

Original language	English
Pages (from-to)	1982-1990
Number of pages	9
Journal	ACS Nano
Volume	11
Issue number	2
DOIs	https://doi.org/10.1021/acsnano.6b08142
State	Published - 28 Feb 2017

Keywords

all-solution-processed
flexible device
inverted architecture
quantum dot-light-emitting diode

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10.1021/acsnano.6b08142

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title = "Polyethylenimine Ethoxylated-Mediated All-Solution-Processed High-Performance Flexible Inverted Quantum Dot-Light-Emitting Device",

abstract = "We report on an all-solution-processed fabrication of highly efficient green quantum dot-light-emitting diodes (QLEDs) with an inverted architecture, where an interfacial polymeric surface modifier of polyethylenimine ethoxylated (PEIE) is inserted between a quantum dot (QD) emitting layer (EML) and a hole transport layer (HTL), and a MoOx hole injection layer is solution deposited on top of the HTL. Among the inverted QLEDs with varied PEIE thicknesses, the device with an optimal PEIE thickness of 15.5 nm shows record maximum efficiency values of 65.3 cd/A in current efficiency and 15.6\% in external quantum efficiency (EQE). All-solution-processed fabrication of inverted QLED is further implemented on a flexible platform by developing a high-performing transparent conducting composite film of ZnO nanoparticles-overcoated on Ag nanowires. The resulting flexible inverted device possesses 35.1 cd/A in current efficiency and 8.4\% in EQE, which are also the highest efficiency values ever reported in flexible QLEDs.",

keywords = "all-solution-processed, flexible device, inverted architecture, quantum dot-light-emitting diode",

author = "Daekyoung Kim and Yan Fu and Sunho Kim and Woosuk Lee and Lee, \{Ki Heon\} and Chung, \{Ho Kyoon\} and Lee, \{Hoo Jeong\} and Heesun Yang and Heeyeop Chae",

note = "Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

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AU - Kim, Daekyoung

AU - Fu, Yan

AU - Kim, Sunho

AU - Lee, Woosuk

AU - Lee, Ki Heon

AU - Chung, Ho Kyoon

AU - Lee, Hoo Jeong

AU - Yang, Heesun

AU - Chae, Heeyeop

PY - 2017/2/28

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N2 - We report on an all-solution-processed fabrication of highly efficient green quantum dot-light-emitting diodes (QLEDs) with an inverted architecture, where an interfacial polymeric surface modifier of polyethylenimine ethoxylated (PEIE) is inserted between a quantum dot (QD) emitting layer (EML) and a hole transport layer (HTL), and a MoOx hole injection layer is solution deposited on top of the HTL. Among the inverted QLEDs with varied PEIE thicknesses, the device with an optimal PEIE thickness of 15.5 nm shows record maximum efficiency values of 65.3 cd/A in current efficiency and 15.6% in external quantum efficiency (EQE). All-solution-processed fabrication of inverted QLED is further implemented on a flexible platform by developing a high-performing transparent conducting composite film of ZnO nanoparticles-overcoated on Ag nanowires. The resulting flexible inverted device possesses 35.1 cd/A in current efficiency and 8.4% in EQE, which are also the highest efficiency values ever reported in flexible QLEDs.

AB - We report on an all-solution-processed fabrication of highly efficient green quantum dot-light-emitting diodes (QLEDs) with an inverted architecture, where an interfacial polymeric surface modifier of polyethylenimine ethoxylated (PEIE) is inserted between a quantum dot (QD) emitting layer (EML) and a hole transport layer (HTL), and a MoOx hole injection layer is solution deposited on top of the HTL. Among the inverted QLEDs with varied PEIE thicknesses, the device with an optimal PEIE thickness of 15.5 nm shows record maximum efficiency values of 65.3 cd/A in current efficiency and 15.6% in external quantum efficiency (EQE). All-solution-processed fabrication of inverted QLED is further implemented on a flexible platform by developing a high-performing transparent conducting composite film of ZnO nanoparticles-overcoated on Ag nanowires. The resulting flexible inverted device possesses 35.1 cd/A in current efficiency and 8.4% in EQE, which are also the highest efficiency values ever reported in flexible QLEDs.

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KW - inverted architecture

KW - quantum dot-light-emitting diode

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SN - 1936-0851

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SP - 1982

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JO - ACS Nano

JF - ACS Nano

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ER -

Polyethylenimine Ethoxylated-Mediated All-Solution-Processed High-Performance Flexible Inverted Quantum Dot-Light-Emitting Device

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