@inproceedings{6c7371f9bf02407783cc87f916ab3374,
title = "PMOS LDD structure and conditions for wide driving range of driving TFT",
abstract = "This paper examines techniques to improve the driving range (Dr-range) of a driving TFT to obtain an accurate color gradient for AMOLEDs. The electrical characteristics of PMOS polycrystalline silicon thin-film transistors (TFTs) with a lightly doped drain (LDD) have been studied using ATLAS device simulation tool. The width of LDD was varied from 0 to 4 fjm, and the doping concentration was changed. The electrical behaviors of PMOS LDD TFT were studied both experimentally and numerically. This paper shows that an LDD with a width of 2 /jm has a wide DR-range. LDDs with widths of 0, 3, or 4 /jm have small DR-ranges, or have insufficient on-current values and cannot be used as driving TFTs. A wide DR-range is obtained with a doping concentration of less than 1 1013/cm2.",
keywords = "Amoled, Dr-range, Driving range, Ldd, Pmos",
author = "Heechul Jeon and Sunyoul Lee and Yongsoo Lee and Kyungsoo Jang and Lee, \{Youn Jung\} and Junsin Yi",
note = "Publisher Copyright: {\textcopyright} 2013 ITE and SID.; 20th International Display Workshops 2013, IDW 2013 ; Conference date: 03-12-2013 Through 06-12-2013",
year = "2013",
language = "English",
series = "Proceedings of the International Display Workshops",
publisher = "International Display Workshops",
pages = "404--407",
booktitle = "20th International Display Workshops 2013, IDW 2013",
address = "Japan",
}