Abstract
The effect of corrosion induced by interlayer dielectrics in the microelectronic devices was studied. Thiophene was considered as a possible candidate for the interlayer dielectric for multilevel metallization of semiconductor devices. The protective abilities of thiophene in 3.5 wt% NaCl solution were examined by electrochemical measurements and wettability tests. Overall, the plasma-polymerized thiophene film in 3.5 wt% NaCl solution provided an increased corrosion performance with increasing RF power.
| Original language | English |
|---|---|
| Pages (from-to) | 951-953 |
| Number of pages | 3 |
| Journal | Journal of Materials Science Letters |
| Volume | 21 |
| Issue number | 12 |
| DOIs | |
| State | Published - 15 Jun 2002 |