Piezoelectric effect in epitaxial PbZr1-x TixO3 thin films near morphotropic phase boundary region

Yong Kwan Kim; Sang Sub Kim; Bongki Lee; Hyunjung Shin; Sunggi Baik

doi:10.1557/JMR.2005.0129

Piezoelectric effect in epitaxial PbZr_1-x Ti_xO₃ thin films near morphotropic phase boundary region

Yong Kwan Kim
, Sang Sub Kim
, Bongki Lee
, Hyunjung Shin
, Sunggi Baik

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The relationship between crystal structure and piezo-response was investigated in epitaxially grown PbZr_1-x Ti_xO₃ (PZT) thin films on Pt(001)/MgO(001) with a thin PbTiO₃ interlayer. Insertion of the interlayer resulted in significant relaxation of the strain that could be developed in the course of deposition of the PZT films, consequently leading us to single out only the effect of composition. Composition of the morphotropic phase boundary (MPB), at which tetragonal and rhombohedral phases are mixed with the same volume fraction, was found to be ∼0.55 in Ti/(Zr + Ti) ratio in our films, which is close to the value for bulk polycrystalline PZT (∼0.50). The piezoelectric response peaks were two times higher in the MPB regime than in the single phase regime due to structural instability caused by the coexistence of two phases. The results indicate that epitaxial PZT films having the MPB composition are advantageous over those of other compositions for nano-storage devices based on scanning force microscopy.

Original language	English
Pages (from-to)	787-790
Number of pages	4
Journal	Journal of Materials Research
Volume	20
Issue number	4
DOIs	https://doi.org/10.1557/JMR.2005.0129
State	Published - Apr 2005
Externally published	Yes

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@article{f8bc4e41b26d4ef6b81158bfaaab2fe0,

title = "Piezoelectric effect in epitaxial PbZr1-x TixO3 thin films near morphotropic phase boundary region",

abstract = "The relationship between crystal structure and piezo-response was investigated in epitaxially grown PbZr1-x TixO3 (PZT) thin films on Pt(001)/MgO(001) with a thin PbTiO3 interlayer. Insertion of the interlayer resulted in significant relaxation of the strain that could be developed in the course of deposition of the PZT films, consequently leading us to single out only the effect of composition. Composition of the morphotropic phase boundary (MPB), at which tetragonal and rhombohedral phases are mixed with the same volume fraction, was found to be ∼0.55 in Ti/(Zr + Ti) ratio in our films, which is close to the value for bulk polycrystalline PZT (∼0.50). The piezoelectric response peaks were two times higher in the MPB regime than in the single phase regime due to structural instability caused by the coexistence of two phases. The results indicate that epitaxial PZT films having the MPB composition are advantageous over those of other compositions for nano-storage devices based on scanning force microscopy.",

author = "Kim, \{Yong Kwan\} and Kim, \{Sang Sub\} and Bongki Lee and Hyunjung Shin and Sunggi Baik",

year = "2005",

month = apr,

doi = "10.1557/JMR.2005.0129",

language = "English",

volume = "20",

pages = "787--790",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Springer International Publishing AG",

number = "4",

}

TY - JOUR

T1 - Piezoelectric effect in epitaxial PbZr1-x TixO3 thin films near morphotropic phase boundary region

AU - Kim, Yong Kwan

AU - Kim, Sang Sub

AU - Lee, Bongki

AU - Shin, Hyunjung

AU - Baik, Sunggi

PY - 2005/4

Y1 - 2005/4

N2 - The relationship between crystal structure and piezo-response was investigated in epitaxially grown PbZr1-x TixO3 (PZT) thin films on Pt(001)/MgO(001) with a thin PbTiO3 interlayer. Insertion of the interlayer resulted in significant relaxation of the strain that could be developed in the course of deposition of the PZT films, consequently leading us to single out only the effect of composition. Composition of the morphotropic phase boundary (MPB), at which tetragonal and rhombohedral phases are mixed with the same volume fraction, was found to be ∼0.55 in Ti/(Zr + Ti) ratio in our films, which is close to the value for bulk polycrystalline PZT (∼0.50). The piezoelectric response peaks were two times higher in the MPB regime than in the single phase regime due to structural instability caused by the coexistence of two phases. The results indicate that epitaxial PZT films having the MPB composition are advantageous over those of other compositions for nano-storage devices based on scanning force microscopy.

AB - The relationship between crystal structure and piezo-response was investigated in epitaxially grown PbZr1-x TixO3 (PZT) thin films on Pt(001)/MgO(001) with a thin PbTiO3 interlayer. Insertion of the interlayer resulted in significant relaxation of the strain that could be developed in the course of deposition of the PZT films, consequently leading us to single out only the effect of composition. Composition of the morphotropic phase boundary (MPB), at which tetragonal and rhombohedral phases are mixed with the same volume fraction, was found to be ∼0.55 in Ti/(Zr + Ti) ratio in our films, which is close to the value for bulk polycrystalline PZT (∼0.50). The piezoelectric response peaks were two times higher in the MPB regime than in the single phase regime due to structural instability caused by the coexistence of two phases. The results indicate that epitaxial PZT films having the MPB composition are advantageous over those of other compositions for nano-storage devices based on scanning force microscopy.

UR - https://www.scopus.com/pages/publications/20844463391

U2 - 10.1557/JMR.2005.0129

DO - 10.1557/JMR.2005.0129

M3 - Article

AN - SCOPUS:20844463391

SN - 0884-2914

VL - 20

SP - 787

EP - 790

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 4

ER -

Piezoelectric effect in epitaxial PbZr_1-x Ti_xO₃ thin films near morphotropic phase boundary region

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