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Physical and electrical properties of W/MNx/poly-Si1-xGex (x = 0, 0.2, 0.6) gates stack with post-thermal process

  • S. K. Kang
  • , B. G. Min
  • , J. J. Kim
  • , D. H. Ko
  • , H. B. Kang
  • , C. W. Yang
  • , K. Y. Lim
  • , T. H. Ahn
  • Yonsei University
  • Sungkyunkwan University
  • SK Corporation

Research output: Contribution to journal › Article › peer-review

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