Photoresist ashing technology using N2/O2 ferrite-core ICP in the dual damascene process

Hyoun Woo Kim; Ju Hyun Myung; Jong Woo Lee; Hyung Sun Kim; Keeho Kim; Jeong Yeol Jang; Tae Ho Yoon; Sung Kyeong Kim; Dae Kyu Choi; Chin Wook Chung; Geun Young Yeom; Jae Min Myoung; Hyoung June Kim

doi:10.1007/s10853-006-0132-6

Photoresist ashing technology using N₂/O₂ ferrite-core ICP in the dual damascene process

Hyoun Woo Kim, Ju Hyun Myung, Jong Woo Lee, Hyung Sun Kim, Keeho Kim, Jeong Yeol Jang, Tae Ho Yoon, Sung Kyeong Kim, Dae Kyu Choi, Chin Wook Chung, Geun Young Yeom, Jae Min Myoung, Hyoung June Kim

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The characteristics of the photoresist (PR) ashing process with respect to the dual damascene structure in its low-k materials scheme were investigated. The O₂ plasma used in the conventional PR ashing oxidizes low-k material and makes an SiO₂-like layer, which causes the increase of the dielectric constant and the leakage current. The oxygen contributes to damaging the low-k material by breaking the Si-CH₃ and C-H bonds and thus by changing the low-k dielectric layer to the SiO₂-like material, which can be easily removed by the HF solution. The optimized condition for high PR ashing rate and low ashing damage was achieved with the help of O₂/(N₂ + O₂) gas flow ratio of 0.1. It was observed that the ashing process removes both PR on top of the structure and inside the via hole.

Original language	English
Pages (from-to)	5040-5042
Number of pages	3
Journal	Journal of Materials Science
Volume	41
Issue number	15
DOIs	https://doi.org/10.1007/s10853-006-0132-6
State	Published - Aug 2006

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@article{10476d585e3447749315e116d30086bb,

title = "Photoresist ashing technology using N2/O2 ferrite-core ICP in the dual damascene process",

abstract = "The characteristics of the photoresist (PR) ashing process with respect to the dual damascene structure in its low-k materials scheme were investigated. The O2 plasma used in the conventional PR ashing oxidizes low-k material and makes an SiO2-like layer, which causes the increase of the dielectric constant and the leakage current. The oxygen contributes to damaging the low-k material by breaking the Si-CH3 and C-H bonds and thus by changing the low-k dielectric layer to the SiO2-like material, which can be easily removed by the HF solution. The optimized condition for high PR ashing rate and low ashing damage was achieved with the help of O2/(N2 + O2) gas flow ratio of 0.1. It was observed that the ashing process removes both PR on top of the structure and inside the via hole.",

author = "Kim, \{Hyoun Woo\} and Myung, \{Ju Hyun\} and Lee, \{Jong Woo\} and Kim, \{Hyung Sun\} and Keeho Kim and Jang, \{Jeong Yeol\} and Yoon, \{Tae Ho\} and Kim, \{Sung Kyeong\} and Choi, \{Dae Kyu\} and Chung, \{Chin Wook\} and Yeom, \{Geun Young\} and Myoung, \{Jae Min\} and Kim, \{Hyoung June\}",

year = "2006",

month = aug,

doi = "10.1007/s10853-006-0132-6",

language = "English",

volume = "41",

pages = "5040--5042",

journal = "Journal of Materials Science",

issn = "0022-2461",

publisher = "Springer",

number = "15",

}

TY - JOUR

T1 - Photoresist ashing technology using N2/O2 ferrite-core ICP in the dual damascene process

AU - Kim, Hyoun Woo

AU - Myung, Ju Hyun

AU - Lee, Jong Woo

AU - Kim, Hyung Sun

AU - Kim, Keeho

AU - Jang, Jeong Yeol

AU - Yoon, Tae Ho

AU - Kim, Sung Kyeong

AU - Choi, Dae Kyu

AU - Chung, Chin Wook

AU - Yeom, Geun Young

AU - Myoung, Jae Min

AU - Kim, Hyoung June

PY - 2006/8

Y1 - 2006/8

N2 - The characteristics of the photoresist (PR) ashing process with respect to the dual damascene structure in its low-k materials scheme were investigated. The O2 plasma used in the conventional PR ashing oxidizes low-k material and makes an SiO2-like layer, which causes the increase of the dielectric constant and the leakage current. The oxygen contributes to damaging the low-k material by breaking the Si-CH3 and C-H bonds and thus by changing the low-k dielectric layer to the SiO2-like material, which can be easily removed by the HF solution. The optimized condition for high PR ashing rate and low ashing damage was achieved with the help of O2/(N2 + O2) gas flow ratio of 0.1. It was observed that the ashing process removes both PR on top of the structure and inside the via hole.

AB - The characteristics of the photoresist (PR) ashing process with respect to the dual damascene structure in its low-k materials scheme were investigated. The O2 plasma used in the conventional PR ashing oxidizes low-k material and makes an SiO2-like layer, which causes the increase of the dielectric constant and the leakage current. The oxygen contributes to damaging the low-k material by breaking the Si-CH3 and C-H bonds and thus by changing the low-k dielectric layer to the SiO2-like material, which can be easily removed by the HF solution. The optimized condition for high PR ashing rate and low ashing damage was achieved with the help of O2/(N2 + O2) gas flow ratio of 0.1. It was observed that the ashing process removes both PR on top of the structure and inside the via hole.

UR - https://www.scopus.com/pages/publications/33748855594

U2 - 10.1007/s10853-006-0132-6

DO - 10.1007/s10853-006-0132-6

M3 - Article

AN - SCOPUS:33748855594

SN - 0022-2461

VL - 41

SP - 5040

EP - 5042

JO - Journal of Materials Science

JF - Journal of Materials Science

IS - 15

ER -

Photoresist ashing technology using N₂/O₂ ferrite-core ICP in the dual damascene process

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