Photo-activated indium-strontium-zinc-oxide thin-film transistors using a strontium nitrate precursor

Woobin Lee; Minkyung Lee; Gyeong Min Yi; Sung Kyu Park; Yong Hoon Kim

doi:10.1166/jno.2015.1751

Photo-activated indium-strontium-zinc-oxide thin-film transistors using a strontium nitrate precursor

Woobin Lee
, Minkyung Lee
, Gyeong Min Yi
, Sung Kyu Park
, Yong Hoon Kim

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Photochemically activated indium-strontium-zinc oxide (ISZO) thin-film transistors (TFTs) are fabricated by using strontium nitrate as a metallic precursor. The formulated ISZO precursor solutions had a broad absorption characteristic in the ultraviolet region as compared to the IGZO precursor solution. Photochemical activation, which is mediated by deep ultraviolet irradiation in N₂ atmosphere, allowed formation of a dense ISZO and ISO semiconductor films at a low temperature. By optimizing the incorporated strontium composition, ISZO TFTs with an average field-effect mobility of 2.15 cm²/Vs, on/off ratio of ∼107 , and subthreshold slope of 0.71 V/decade were obtained. In addition, we investigated the positive gate-bias stress characteristics of the ISZO TFTs. The fabricated ISZO TFTs exhibited a positive threshold voltage shift similar to that of IGZO TFTs.

Original language	English
Pages (from-to)	366-370
Number of pages	5
Journal	Journal of Nanoelectronics and Optoelectronics
Volume	10
Issue number	3
DOIs	https://doi.org/10.1166/jno.2015.1751
State	Published - 1 Jun 2015

Keywords

ISZO
Photochemical activation
Strontium nitrate
Thin-film transistor

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10.1166/jno.2015.1751

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title = "Photo-activated indium-strontium-zinc-oxide thin-film transistors using a strontium nitrate precursor",

abstract = "Photochemically activated indium-strontium-zinc oxide (ISZO) thin-film transistors (TFTs) are fabricated by using strontium nitrate as a metallic precursor. The formulated ISZO precursor solutions had a broad absorption characteristic in the ultraviolet region as compared to the IGZO precursor solution. Photochemical activation, which is mediated by deep ultraviolet irradiation in N2 atmosphere, allowed formation of a dense ISZO and ISO semiconductor films at a low temperature. By optimizing the incorporated strontium composition, ISZO TFTs with an average field-effect mobility of 2.15 cm2/Vs, on/off ratio of ∼107 , and subthreshold slope of 0.71 V/decade were obtained. In addition, we investigated the positive gate-bias stress characteristics of the ISZO TFTs. The fabricated ISZO TFTs exhibited a positive threshold voltage shift similar to that of IGZO TFTs.",

keywords = "ISZO, Photochemical activation, Strontium nitrate, Thin-film transistor",

author = "Woobin Lee and Minkyung Lee and Yi, \{Gyeong Min\} and Park, \{Sung Kyu\} and Kim, \{Yong Hoon\}",

note = "Publisher Copyright: Copyright {\textcopyright} 2015 American Scientific Publishers.",

year = "2015",

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doi = "10.1166/jno.2015.1751",

language = "English",

volume = "10",

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TY - JOUR

T1 - Photo-activated indium-strontium-zinc-oxide thin-film transistors using a strontium nitrate precursor

AU - Lee, Woobin

AU - Lee, Minkyung

AU - Yi, Gyeong Min

AU - Park, Sung Kyu

AU - Kim, Yong Hoon

PY - 2015/6/1

Y1 - 2015/6/1

N2 - Photochemically activated indium-strontium-zinc oxide (ISZO) thin-film transistors (TFTs) are fabricated by using strontium nitrate as a metallic precursor. The formulated ISZO precursor solutions had a broad absorption characteristic in the ultraviolet region as compared to the IGZO precursor solution. Photochemical activation, which is mediated by deep ultraviolet irradiation in N2 atmosphere, allowed formation of a dense ISZO and ISO semiconductor films at a low temperature. By optimizing the incorporated strontium composition, ISZO TFTs with an average field-effect mobility of 2.15 cm2/Vs, on/off ratio of ∼107 , and subthreshold slope of 0.71 V/decade were obtained. In addition, we investigated the positive gate-bias stress characteristics of the ISZO TFTs. The fabricated ISZO TFTs exhibited a positive threshold voltage shift similar to that of IGZO TFTs.

AB - Photochemically activated indium-strontium-zinc oxide (ISZO) thin-film transistors (TFTs) are fabricated by using strontium nitrate as a metallic precursor. The formulated ISZO precursor solutions had a broad absorption characteristic in the ultraviolet region as compared to the IGZO precursor solution. Photochemical activation, which is mediated by deep ultraviolet irradiation in N2 atmosphere, allowed formation of a dense ISZO and ISO semiconductor films at a low temperature. By optimizing the incorporated strontium composition, ISZO TFTs with an average field-effect mobility of 2.15 cm2/Vs, on/off ratio of ∼107 , and subthreshold slope of 0.71 V/decade were obtained. In addition, we investigated the positive gate-bias stress characteristics of the ISZO TFTs. The fabricated ISZO TFTs exhibited a positive threshold voltage shift similar to that of IGZO TFTs.

KW - ISZO

KW - Photochemical activation

KW - Strontium nitrate

KW - Thin-film transistor

UR - https://www.scopus.com/pages/publications/84939533475

U2 - 10.1166/jno.2015.1751

DO - 10.1166/jno.2015.1751

M3 - Article

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SN - 1555-130X

VL - 10

SP - 366

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JO - Journal of Nanoelectronics and Optoelectronics

JF - Journal of Nanoelectronics and Optoelectronics

IS - 3

ER -

Photo-activated indium-strontium-zinc-oxide thin-film transistors using a strontium nitrate precursor

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Keywords

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