Phosphorus doped graphene by inductively coupled plasma and triphenylphosphine treatments

Dong Wook Shin; Tae Sung Kim; Ji Beom Yoo

doi:10.1016/j.materresbull.2016.02.009

Phosphorus doped graphene by inductively coupled plasma and triphenylphosphine treatments

Dong Wook Shin
, Tae Sung Kim
, Ji Beom Yoo

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Graphene is considered a host material for various applications in next-generation electronic devices. However, despite its excellent properties, one of the most important issues to be solved as an electronic material is the creation of an energy band gap. Substitution doping is a promising method for opening the energy band gap of graphene. Herein, we demonstrate the substitutional doping of graphene with phosphorus using inductively coupled plasma (ICP) and triphenylphosphine (TPP) treatments. The electrical transfer characteristics of the phosphorus doped graphene field effect transistor (GFET) have a V_dirac of ∼ − 54 V. The chemical bonding between P and C was clearly observed in XPS spectra, and uniform distribution of phosphorus within graphene domains was confirmed by EELS mapping. The capability for substitutional doping of graphene with phosphorus can significantly promote the development of graphene based electronic devices.

Original language	English
Pages (from-to)	71-75
Number of pages	5
Journal	Materials Research Bulletin
Volume	82
DOIs	https://doi.org/10.1016/j.materresbull.2016.02.009
State	Published - 1 Oct 2016
Externally published	Yes

Keywords

A. Electronic materials
B. Vapor deposition
C. Electron energy loss spectroscopy (EELS)
D. Defects
D. Phosphors

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10.1016/j.materresbull.2016.02.009

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title = "Phosphorus doped graphene by inductively coupled plasma and triphenylphosphine treatments",

abstract = "Graphene is considered a host material for various applications in next-generation electronic devices. However, despite its excellent properties, one of the most important issues to be solved as an electronic material is the creation of an energy band gap. Substitution doping is a promising method for opening the energy band gap of graphene. Herein, we demonstrate the substitutional doping of graphene with phosphorus using inductively coupled plasma (ICP) and triphenylphosphine (TPP) treatments. The electrical transfer characteristics of the phosphorus doped graphene field effect transistor (GFET) have a Vdirac of ∼ − 54 V. The chemical bonding between P and C was clearly observed in XPS spectra, and uniform distribution of phosphorus within graphene domains was confirmed by EELS mapping. The capability for substitutional doping of graphene with phosphorus can significantly promote the development of graphene based electronic devices.",

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T1 - Phosphorus doped graphene by inductively coupled plasma and triphenylphosphine treatments

AU - Shin, Dong Wook

AU - Kim, Tae Sung

AU - Yoo, Ji Beom

PY - 2016/10/1

Y1 - 2016/10/1

N2 - Graphene is considered a host material for various applications in next-generation electronic devices. However, despite its excellent properties, one of the most important issues to be solved as an electronic material is the creation of an energy band gap. Substitution doping is a promising method for opening the energy band gap of graphene. Herein, we demonstrate the substitutional doping of graphene with phosphorus using inductively coupled plasma (ICP) and triphenylphosphine (TPP) treatments. The electrical transfer characteristics of the phosphorus doped graphene field effect transistor (GFET) have a Vdirac of ∼ − 54 V. The chemical bonding between P and C was clearly observed in XPS spectra, and uniform distribution of phosphorus within graphene domains was confirmed by EELS mapping. The capability for substitutional doping of graphene with phosphorus can significantly promote the development of graphene based electronic devices.

AB - Graphene is considered a host material for various applications in next-generation electronic devices. However, despite its excellent properties, one of the most important issues to be solved as an electronic material is the creation of an energy band gap. Substitution doping is a promising method for opening the energy band gap of graphene. Herein, we demonstrate the substitutional doping of graphene with phosphorus using inductively coupled plasma (ICP) and triphenylphosphine (TPP) treatments. The electrical transfer characteristics of the phosphorus doped graphene field effect transistor (GFET) have a Vdirac of ∼ − 54 V. The chemical bonding between P and C was clearly observed in XPS spectra, and uniform distribution of phosphorus within graphene domains was confirmed by EELS mapping. The capability for substitutional doping of graphene with phosphorus can significantly promote the development of graphene based electronic devices.

KW - A. Electronic materials

KW - B. Vapor deposition

KW - C. Electron energy loss spectroscopy (EELS)

KW - D. Defects

KW - D. Phosphors

UR - https://www.scopus.com/pages/publications/84958279519

U2 - 10.1016/j.materresbull.2016.02.009

DO - 10.1016/j.materresbull.2016.02.009

M3 - Article

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SN - 0025-5408

VL - 82

SP - 71

EP - 75

JO - Materials Research Bulletin

JF - Materials Research Bulletin

ER -

Phosphorus doped graphene by inductively coupled plasma and triphenylphosphine treatments

Abstract

Keywords

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