Abstract
Multilayer MoS2 is exfoliated by Li treatment. A thin film of Li-treated MoS2 contains a large portion of 1T phases. This is attributed to the atomic structural change caused by Li insertion, which is investigated using X-ray photoelectron spectroscopy (XPS). In a phase recovery via thermal annealing at 523 K in air, we observe another phase, referred to as the relaxed 1T phase, with a slightly larger binding energy than the 1T phase. After annealing at 523 K in air, the peak intensity of the relaxed 1T phase is reduced, accompanying a strong MoOx peak and weak S 2s peak, according to XPS. This indicates that the annealing of Li-treated MoS2 in air yields sulfur vacancies that induce the oxidation of Mo. However, after annealing at 523 K in vacuum, no MoOx is observed, and the considerable peak intensity of the relaxed 1T phase remains, which starkly contrasts Raman-spectroscopy results supporting a full recovery from the 1T phase to the 2H phase. The absence of a gating effect of the Li-treated MoS2 device supports the possibility of an incomplete phase change of Li-treated MoS2 annealed in a vacuum.
| Original language | English |
|---|---|
| Pages (from-to) | 60-65 |
| Number of pages | 6 |
| Journal | Current Applied Physics |
| Volume | 17 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1 Jan 2017 |
Keywords
- Chemical exfoliation
- Li intercalation
- MoS
- Phase transition
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