Perpendicular magnetic tunnel junctions having CoFeB/CoPt alloy layers

Gyung Min Choi; Byoung Chul Min; Kyung Ho Shin

doi:10.1109/TMAG.2011.2176744

Perpendicular magnetic tunnel junctions having CoFeB/CoPt alloy layers

Gyung Min Choi
, Byoung Chul Min
, Kyung Ho Shin

Korea Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have fabricated perpendicular magnetic tunnel junctions consisting of hcp Ru underlayer/hcp CoPt alloy/CoFeB/MgO/CoFeB/CoPt alloy (or Co)/Pt capping layer. By inserting the CoPt alloy (or Co) between the CoFeB and Pt capping layers, it is possible to increase a perpendicular magnetic anisotropy of the top electrode. Using a top electrode of Co ₄₀Fe ₄₀B ₂₀(0.4 nm)/Co ₇₂Pt ₂₈(1.6 nm)/Pt, we have obtained an effective magnetic anisotropy of 3.3 × 10 ⁶ erg/cm ³ and a tunnel magnetoresistance (TMR) of 9.4%. The analysis of the crystal structure reveals that the low TMR is a consequence of the fcc (111) texture of CoFeB layers.

Original language	English
Article number	6084752
Pages (from-to)	1130-1133
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	48
Issue number	3
DOIs	https://doi.org/10.1109/TMAG.2011.2176744
State	Published - Mar 2012
Externally published	Yes

Keywords

Magnetic tunnel junctions (MTJs)
perpendicular magnetic anisotropy (PMA)
tunnel magnetoresistance (TMR)

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10.1109/TMAG.2011.2176744

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title = "Perpendicular magnetic tunnel junctions having CoFeB/CoPt alloy layers",

abstract = "We have fabricated perpendicular magnetic tunnel junctions consisting of hcp Ru underlayer/hcp CoPt alloy/CoFeB/MgO/CoFeB/CoPt alloy (or Co)/Pt capping layer. By inserting the CoPt alloy (or Co) between the CoFeB and Pt capping layers, it is possible to increase a perpendicular magnetic anisotropy of the top electrode. Using a top electrode of Co 40Fe 40B 20(0.4 nm)/Co 72Pt 28(1.6 nm)/Pt, we have obtained an effective magnetic anisotropy of 3.3 × 10 6 erg/cm 3 and a tunnel magnetoresistance (TMR) of 9.4\%. The analysis of the crystal structure reveals that the low TMR is a consequence of the fcc (111) texture of CoFeB layers.",

keywords = "Magnetic tunnel junctions (MTJs), perpendicular magnetic anisotropy (PMA), tunnel magnetoresistance (TMR)",

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year = "2012",

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doi = "10.1109/TMAG.2011.2176744",

language = "English",

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journal = "IEEE Transactions on Magnetics",

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AU - Choi, Gyung Min

AU - Min, Byoung Chul

AU - Shin, Kyung Ho

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N2 - We have fabricated perpendicular magnetic tunnel junctions consisting of hcp Ru underlayer/hcp CoPt alloy/CoFeB/MgO/CoFeB/CoPt alloy (or Co)/Pt capping layer. By inserting the CoPt alloy (or Co) between the CoFeB and Pt capping layers, it is possible to increase a perpendicular magnetic anisotropy of the top electrode. Using a top electrode of Co 40Fe 40B 20(0.4 nm)/Co 72Pt 28(1.6 nm)/Pt, we have obtained an effective magnetic anisotropy of 3.3 × 10 6 erg/cm 3 and a tunnel magnetoresistance (TMR) of 9.4%. The analysis of the crystal structure reveals that the low TMR is a consequence of the fcc (111) texture of CoFeB layers.

AB - We have fabricated perpendicular magnetic tunnel junctions consisting of hcp Ru underlayer/hcp CoPt alloy/CoFeB/MgO/CoFeB/CoPt alloy (or Co)/Pt capping layer. By inserting the CoPt alloy (or Co) between the CoFeB and Pt capping layers, it is possible to increase a perpendicular magnetic anisotropy of the top electrode. Using a top electrode of Co 40Fe 40B 20(0.4 nm)/Co 72Pt 28(1.6 nm)/Pt, we have obtained an effective magnetic anisotropy of 3.3 × 10 6 erg/cm 3 and a tunnel magnetoresistance (TMR) of 9.4%. The analysis of the crystal structure reveals that the low TMR is a consequence of the fcc (111) texture of CoFeB layers.

KW - Magnetic tunnel junctions (MTJs)

KW - perpendicular magnetic anisotropy (PMA)

KW - tunnel magnetoresistance (TMR)

UR - https://www.scopus.com/pages/publications/84858110497

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DO - 10.1109/TMAG.2011.2176744

M3 - Article

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SP - 1130

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 3

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ER -

Perpendicular magnetic tunnel junctions having CoFeB/CoPt alloy layers

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Keywords

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