Performance enhancement of triisopropylsilylethynyl pentacene organic field effect transistors with inkjet-printed silver source/drain electrodes achieved via dispersible reduced graphene oxide

We report a performance enhancement of triisopropylsilylethynyl (TIPS) pentacene organic field effect transistors (OFETs) obtained by treating the surface of SiO₂/Si substrate with dispersible reduced graphene oxide (rGO). The source and drain electrodes were patterned with inkjet-printed highly conductive silver. The sheet resistance of inkjet-patterned silver electrodes has found to be ~ 1 Ω/□, which is comparable to that of typical vacuum-evaporated silver electrodes. The electrical performance has improved by rGO treatment, with a morphology improved for the active TIPS pentacene layer. The rGO treatment increased the morphological grain size of TIPS pentacene, resulting in a decreased number of interfacial trapping sites in the carrier transport paths. The field effect mobility of the TIPS pentacene OFETs, following the rGO surface treatment, was improved from 0.082 cm ²/Va·s to 0.141 cm²/Va·s.