TY - GEN
T1 - Performance benchmarks for Si, III-V, TFET, and carbon nanotube FET - Re-thinking the technology assessment methodology for complementary logic applications
AU - Wei, Lan
AU - Oh, Saeroonter
AU - Wong, H. S.Philip
PY - 2010
Y1 - 2010
N2 - Aspiring emerging device technologies (e.g. III-V, CNFET, TFET) are often targeted to outperform Si FETs at the same off-state current (Ioff) and supply voltage (Vdd). We present a new device technology assessment methodology based on energy-delay optimization which treats I off and Vdd as "free variables", and bounded by constraints due to device variation and circuit noise margin. We show that for each emerging device (III-V, CNFET, TFET), there is a corresponding and different optimal set of Ioff and Vdd, and an optimal energy-delay. Today's best-available III-V and CNFET can outperform the best Si FET by 1.5-2x and 2-3.5x, respectively. Projected into the 10nm gate length regime, III-V-on-Insulator, CNFET, and TFET are 1.25x, 2-3x, and 5-10x (for FO1 delays of 0.3ns, 0.1ns, and 1ns respectively) better than the ITRS target at the same gate length.
AB - Aspiring emerging device technologies (e.g. III-V, CNFET, TFET) are often targeted to outperform Si FETs at the same off-state current (Ioff) and supply voltage (Vdd). We present a new device technology assessment methodology based on energy-delay optimization which treats I off and Vdd as "free variables", and bounded by constraints due to device variation and circuit noise margin. We show that for each emerging device (III-V, CNFET, TFET), there is a corresponding and different optimal set of Ioff and Vdd, and an optimal energy-delay. Today's best-available III-V and CNFET can outperform the best Si FET by 1.5-2x and 2-3.5x, respectively. Projected into the 10nm gate length regime, III-V-on-Insulator, CNFET, and TFET are 1.25x, 2-3x, and 5-10x (for FO1 delays of 0.3ns, 0.1ns, and 1ns respectively) better than the ITRS target at the same gate length.
UR - https://www.scopus.com/pages/publications/79951843158
U2 - 10.1109/IEDM.2010.5703373
DO - 10.1109/IEDM.2010.5703373
M3 - Conference contribution
AN - SCOPUS:79951843158
SN - 9781424474196
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 16.2.1-16.2.4
BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010
T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010
Y2 - 6 December 2010 through 8 December 2010
ER -