Pentacene thin film transistors fabricated on plastic substrates

Jung Hun Lee; Seong Hyun Kim; Gi Heon Kim; Sang Chul Lim; Hyoyoung Lee; Jin Jang; Taehyoung Zyung

doi:10.1016/S0379-6779(03)00197-8

Pentacene thin film transistors fabricated on plastic substrates

Jung Hun Lee, Seong Hyun Kim, Gi Heon Kim, Sang Chul Lim, Hyoyoung Lee, Jin Jang, Taehyoung Zyung

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

In this study, Organic thin film transistors (OTFT) was fabricated on polyethylene naphthalate (PEN) substrate employing Au as source, drain, and gate electrodes. Double-layer of organic dielectrics, thermal curable acrylate polymer (JSS-362) and inorganic dielectrics, aluminum oxide (Al₂O₃) was used as gate dielectrics. The polymeric layer on PEN substrate showed smoother surface than that of PEN substrate. Little surface damage of JSS-362 layer was achieved by using off-axis sputtering apparatus during the inorganic dielectrics fabrication. From the electrical measurements, typical I-V characteristics of the thin film transistor (TFT) device were observed. The field-effect mobility μ was calculated to be 1.4 × 10^-2cm²V^-1s^-1, while the threshold voltage V_T was about -7 V. The on/off ratio was above 10³ when V_G was scanned from -50 to +30 V.

Original language	English
Pages (from-to)	445-451
Number of pages	7
Journal	Synthetic Metals
Volume	139
Issue number	2
DOIs	https://doi.org/10.1016/S0379-6779(03)00197-8
State	Published - 5 Sep 2003
Externally published	Yes

Keywords

Gate dielectrics
Organic transistor
OTFT
Plastic substrate

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@article{3a6d181b8d9645f69b49e5c7e4963fe1,

title = "Pentacene thin film transistors fabricated on plastic substrates",

abstract = "In this study, Organic thin film transistors (OTFT) was fabricated on polyethylene naphthalate (PEN) substrate employing Au as source, drain, and gate electrodes. Double-layer of organic dielectrics, thermal curable acrylate polymer (JSS-362) and inorganic dielectrics, aluminum oxide (Al2O3) was used as gate dielectrics. The polymeric layer on PEN substrate showed smoother surface than that of PEN substrate. Little surface damage of JSS-362 layer was achieved by using off-axis sputtering apparatus during the inorganic dielectrics fabrication. From the electrical measurements, typical I-V characteristics of the thin film transistor (TFT) device were observed. The field-effect mobility μ was calculated to be 1.4 × 10-2cm2V-1s-1, while the threshold voltage VT was about -7 V. The on/off ratio was above 103 when VG was scanned from -50 to +30 V.",

keywords = "Gate dielectrics, Organic transistor, OTFT, Plastic substrate",

author = "Lee, \{Jung Hun\} and Kim, \{Seong Hyun\} and Kim, \{Gi Heon\} and Lim, \{Sang Chul\} and Hyoyoung Lee and Jin Jang and Taehyoung Zyung",

year = "2003",

month = sep,

day = "5",

doi = "10.1016/S0379-6779(03)00197-8",

language = "English",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Pentacene thin film transistors fabricated on plastic substrates

AU - Lee, Jung Hun

AU - Kim, Seong Hyun

AU - Kim, Gi Heon

AU - Lim, Sang Chul

AU - Lee, Hyoyoung

AU - Jang, Jin

AU - Zyung, Taehyoung

PY - 2003/9/5

Y1 - 2003/9/5

N2 - In this study, Organic thin film transistors (OTFT) was fabricated on polyethylene naphthalate (PEN) substrate employing Au as source, drain, and gate electrodes. Double-layer of organic dielectrics, thermal curable acrylate polymer (JSS-362) and inorganic dielectrics, aluminum oxide (Al2O3) was used as gate dielectrics. The polymeric layer on PEN substrate showed smoother surface than that of PEN substrate. Little surface damage of JSS-362 layer was achieved by using off-axis sputtering apparatus during the inorganic dielectrics fabrication. From the electrical measurements, typical I-V characteristics of the thin film transistor (TFT) device were observed. The field-effect mobility μ was calculated to be 1.4 × 10-2cm2V-1s-1, while the threshold voltage VT was about -7 V. The on/off ratio was above 103 when VG was scanned from -50 to +30 V.

AB - In this study, Organic thin film transistors (OTFT) was fabricated on polyethylene naphthalate (PEN) substrate employing Au as source, drain, and gate electrodes. Double-layer of organic dielectrics, thermal curable acrylate polymer (JSS-362) and inorganic dielectrics, aluminum oxide (Al2O3) was used as gate dielectrics. The polymeric layer on PEN substrate showed smoother surface than that of PEN substrate. Little surface damage of JSS-362 layer was achieved by using off-axis sputtering apparatus during the inorganic dielectrics fabrication. From the electrical measurements, typical I-V characteristics of the thin film transistor (TFT) device were observed. The field-effect mobility μ was calculated to be 1.4 × 10-2cm2V-1s-1, while the threshold voltage VT was about -7 V. The on/off ratio was above 103 when VG was scanned from -50 to +30 V.

KW - Gate dielectrics

KW - Organic transistor

KW - OTFT

KW - Plastic substrate

UR - https://www.scopus.com/pages/publications/0041589659

U2 - 10.1016/S0379-6779(03)00197-8

DO - 10.1016/S0379-6779(03)00197-8

M3 - Article

AN - SCOPUS:0041589659

SN - 0379-6779

VL - 139

SP - 445

EP - 451

JO - Synthetic Metals

JF - Synthetic Metals

IS - 2

ER -

Pentacene thin film transistors fabricated on plastic substrates

Abstract

Keywords

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