Pb(Zr,Ti)O3 films fabrication by sol-gel method for piezoelectric actuated device

Bong Ju Kim; Jaichan Lee; Ji Beom Yoo; Kwang Soo No

doi:10.1080/00150199908015799

Pb(Zr,Ti)O₃ films fabrication by sol-gel method for piezoelectric actuated device

Bong Ju Kim
, Jaichan Lee
, Ji Beom Yoo
, Kwang Soo No

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Pb(Zr_0.52,Ti_0.48)O₃ (PZT) films with conducting oxides, (La_0.5,Sr_0.5)CoO₃(LSCO), have been fabricated by a sol-gel method on SiO₂ made by Plasma Enhanced Chemical Vapor Deposition (PECVD). PZT films were made using a 1-3 propanediol based precursor solution which has a high viscosity and boiling point appropriate for thick film fabrication. In the precursor solution, Ti-propoxide and Zr-propoxide are partially substituted with acetylacetone. Crack free PZT films (0.8-1μm) have been successfully fabricated at crystallization temperatures above 700°C. Dielectric constant and dielectric loss of the PZT films were 900-1200 and 2-5%, respectively. The piezoelectric coefficient of PZT films was measured by a modified Mach Zehnder Interferometer. The piezoelectric constant d₃₃ of the PZT films constrained by a substrate was 200 pm/V at 100kV/cm.

Original language	English
Pages (from-to)	247-252
Number of pages	6
Journal	Ferroelectrics
Volume	232
Issue number	1-4
DOIs	https://doi.org/10.1080/00150199908015799
State	Published - 1999

Keywords

1-3 propanediol
Interferometer
LSCO
Piezoelectricity
PZT
Sol-Gel

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@article{3083b7c1d1e646e9ac6bc5fa93532b13,

title = "Pb(Zr,Ti)O3 films fabrication by sol-gel method for piezoelectric actuated device",

abstract = "Pb(Zr0.52,Ti0.48)O3 (PZT) films with conducting oxides, (La0.5,Sr0.5)CoO3(LSCO), have been fabricated by a sol-gel method on SiO2 made by Plasma Enhanced Chemical Vapor Deposition (PECVD). PZT films were made using a 1-3 propanediol based precursor solution which has a high viscosity and boiling point appropriate for thick film fabrication. In the precursor solution, Ti-propoxide and Zr-propoxide are partially substituted with acetylacetone. Crack free PZT films (0.8-1μm) have been successfully fabricated at crystallization temperatures above 700°C. Dielectric constant and dielectric loss of the PZT films were 900-1200 and 2-5\%, respectively. The piezoelectric coefficient of PZT films was measured by a modified Mach Zehnder Interferometer. The piezoelectric constant d33 of the PZT films constrained by a substrate was 200 pm/V at 100kV/cm.",

keywords = "1-3 propanediol, Interferometer, LSCO, Piezoelectricity, PZT, Sol-Gel",

author = "Kim, \{Bong Ju\} and Jaichan Lee and Yoo, \{Ji Beom\} and No, \{Kwang Soo\}",

year = "1999",

doi = "10.1080/00150199908015799",

language = "English",

volume = "232",

pages = "247--252",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

}

TY - JOUR

T1 - Pb(Zr,Ti)O3 films fabrication by sol-gel method for piezoelectric actuated device

AU - Kim, Bong Ju

AU - Lee, Jaichan

AU - Yoo, Ji Beom

AU - No, Kwang Soo

PY - 1999

Y1 - 1999

N2 - Pb(Zr0.52,Ti0.48)O3 (PZT) films with conducting oxides, (La0.5,Sr0.5)CoO3(LSCO), have been fabricated by a sol-gel method on SiO2 made by Plasma Enhanced Chemical Vapor Deposition (PECVD). PZT films were made using a 1-3 propanediol based precursor solution which has a high viscosity and boiling point appropriate for thick film fabrication. In the precursor solution, Ti-propoxide and Zr-propoxide are partially substituted with acetylacetone. Crack free PZT films (0.8-1μm) have been successfully fabricated at crystallization temperatures above 700°C. Dielectric constant and dielectric loss of the PZT films were 900-1200 and 2-5%, respectively. The piezoelectric coefficient of PZT films was measured by a modified Mach Zehnder Interferometer. The piezoelectric constant d33 of the PZT films constrained by a substrate was 200 pm/V at 100kV/cm.

AB - Pb(Zr0.52,Ti0.48)O3 (PZT) films with conducting oxides, (La0.5,Sr0.5)CoO3(LSCO), have been fabricated by a sol-gel method on SiO2 made by Plasma Enhanced Chemical Vapor Deposition (PECVD). PZT films were made using a 1-3 propanediol based precursor solution which has a high viscosity and boiling point appropriate for thick film fabrication. In the precursor solution, Ti-propoxide and Zr-propoxide are partially substituted with acetylacetone. Crack free PZT films (0.8-1μm) have been successfully fabricated at crystallization temperatures above 700°C. Dielectric constant and dielectric loss of the PZT films were 900-1200 and 2-5%, respectively. The piezoelectric coefficient of PZT films was measured by a modified Mach Zehnder Interferometer. The piezoelectric constant d33 of the PZT films constrained by a substrate was 200 pm/V at 100kV/cm.

KW - 1-3 propanediol

KW - Interferometer

KW - LSCO

KW - Piezoelectricity

KW - PZT

KW - Sol-Gel

UR - https://www.scopus.com/pages/publications/0005993078

U2 - 10.1080/00150199908015799

DO - 10.1080/00150199908015799

M3 - Article

AN - SCOPUS:0005993078

SN - 0015-0193

VL - 232

SP - 247

EP - 252

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1-4

ER -

Pb(Zr,Ti)O₃ films fabrication by sol-gel method for piezoelectric actuated device

Abstract

Keywords

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