PbZrxTi1-xO3 ferroelectric thin-film capacitors for flexible nonvolatile memory applications

Jonghyun Rho; Sang Jin Kim; Wook Heo; Nae Eung Lee; Hwan Soo Lee; Jong Hyun Ahn

doi:10.1109/LED.2010.2053344

PbZr_xTi_1-xO₃ ferroelectric thin-film capacitors for flexible nonvolatile memory applications

Jonghyun Rho
, Sang Jin Kim
, Wook Heo
, Nae Eung Lee
, Hwan Soo Lee
, Jong Hyun Ahn

Sungkyunkwan University
Samsung

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

This letter reports the fabrication of PbZr_xTi _1-xO₃ (PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a solgel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-saturated hysteresis loop with a P _r of ∼20μC/cm² and a V_c of ∼1.1 V at a supplied voltage of 3 V, which are similar to those observed for PZT films on rigid wafers, as well as stable operation under an 8-mm bending radius. These characteristics suggest promising applications in flexible electronic systems.

Original language	English
Article number	5512660
Pages (from-to)	1017-1019
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	9
DOIs	https://doi.org/10.1109/LED.2010.2053344
State	Published - Sep 2010
Externally published	Yes

Keywords

Ferroelectric
flexible electronics
nonvolatile memory
PZT

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10.1109/LED.2010.2053344

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title = "PbZrxTi1-xO3 ferroelectric thin-film capacitors for flexible nonvolatile memory applications",

abstract = "This letter reports the fabrication of PbZrxTi 1-xO3 (PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a solgel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-saturated hysteresis loop with a P r of ∼20μC/cm2 and a Vc of ∼1.1 V at a supplied voltage of 3 V, which are similar to those observed for PZT films on rigid wafers, as well as stable operation under an 8-mm bending radius. These characteristics suggest promising applications in flexible electronic systems.",

keywords = "Ferroelectric, flexible electronics, nonvolatile memory, PZT",

author = "Jonghyun Rho and Kim, \{Sang Jin\} and Wook Heo and Lee, \{Nae Eung\} and Lee, \{Hwan Soo\} and Ahn, \{Jong Hyun\}",

year = "2010",

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doi = "10.1109/LED.2010.2053344",

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T1 - PbZrxTi1-xO3 ferroelectric thin-film capacitors for flexible nonvolatile memory applications

AU - Rho, Jonghyun

AU - Kim, Sang Jin

AU - Heo, Wook

AU - Lee, Nae Eung

AU - Lee, Hwan Soo

AU - Ahn, Jong Hyun

PY - 2010/9

Y1 - 2010/9

N2 - This letter reports the fabrication of PbZrxTi 1-xO3 (PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a solgel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-saturated hysteresis loop with a P r of ∼20μC/cm2 and a Vc of ∼1.1 V at a supplied voltage of 3 V, which are similar to those observed for PZT films on rigid wafers, as well as stable operation under an 8-mm bending radius. These characteristics suggest promising applications in flexible electronic systems.

AB - This letter reports the fabrication of PbZrxTi 1-xO3 (PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a solgel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-saturated hysteresis loop with a P r of ∼20μC/cm2 and a Vc of ∼1.1 V at a supplied voltage of 3 V, which are similar to those observed for PZT films on rigid wafers, as well as stable operation under an 8-mm bending radius. These characteristics suggest promising applications in flexible electronic systems.

KW - Ferroelectric

KW - flexible electronics

KW - nonvolatile memory

KW - PZT

UR - https://www.scopus.com/pages/publications/77956180968

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DO - 10.1109/LED.2010.2053344

M3 - Article

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SP - 1017

EP - 1019

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 5512660

ER -

PbZr_xTi_1-xO₃ ferroelectric thin-film capacitors for flexible nonvolatile memory applications

Abstract

Keywords

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