Pairing near the Mott insulating limit

Qiang Hua Wang; Hoon Han Jung; Dung Hai Lee

Pairing near the Mott insulating limit

Qiang Hua Wang
, Hoon Han Jung
, Dung Hai Lee

University of California at Berkeley

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The nanometer-scale gap inhomogeneity revealed by recent scanning tunnel microscope images of Bi₂Sr₂CaCu₂O_8+x (BSCCO) surface suggests that the "gap coherence length" is of that order. Thus a robust pairing gap can develop despite the poorly screened Coulomb interaction. This can be taken as an evidence that the pairing in high-T_c materials hardly affects the charge correlation and hence occurs primarily among the spin degrees of freedom. We provide theoretical support for this point of view.

Original language	English
Article number	054501
Pages (from-to)	545011-545014
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	65
Issue number	5
State	Published - 1 Feb 2002
Externally published	Yes

Cite this

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AU - Wang, Qiang Hua

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AU - Lee, Dung Hai

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N2 - The nanometer-scale gap inhomogeneity revealed by recent scanning tunnel microscope images of Bi2Sr2CaCu2O8+x (BSCCO) surface suggests that the "gap coherence length" is of that order. Thus a robust pairing gap can develop despite the poorly screened Coulomb interaction. This can be taken as an evidence that the pairing in high-Tc materials hardly affects the charge correlation and hence occurs primarily among the spin degrees of freedom. We provide theoretical support for this point of view.

AB - The nanometer-scale gap inhomogeneity revealed by recent scanning tunnel microscope images of Bi2Sr2CaCu2O8+x (BSCCO) surface suggests that the "gap coherence length" is of that order. Thus a robust pairing gap can develop despite the poorly screened Coulomb interaction. This can be taken as an evidence that the pairing in high-Tc materials hardly affects the charge correlation and hence occurs primarily among the spin degrees of freedom. We provide theoretical support for this point of view.

UR - https://www.scopus.com/pages/publications/0036468794

M3 - Article

AN - SCOPUS:0036468794

SN - 1098-0121

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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Pairing near the Mott insulating limit

Abstract

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