P-28: Effect of annealing temperature on reliability of solution-processed zinc tin oxide thin film transistors

Jeong Soo Lee; Yong Jin Kim; Yong Uk Lee; Seung Hee Kuk; Min Koo Han; Yong Hoon Kim

doi:10.1889/1.3499938

P-28: Effect of annealing temperature on reliability of solution-processed zinc tin oxide thin film transistors

Jeong Soo Lee
, Yong Jin Kim
, Yong Uk Lee
, Seung Hee Kuk
, Min Koo Han
, Yong Hoon Kim

Seoul National University
Korea Electronics Technology Institute

Research output: Contribution to journal › Article › peer-review

Abstract

We fabricated solution-processed ZTO TFTs with annealing temperature of 300 °C ∼ 550 °C in order to investigate the reliability of ZTO TFT. The shift of threshold voltage by gate bias-stress of ZTO TFTs is altered according to annealing temperature because of the increase and decrease of trap states caused by bonding variation.

Original language	English
Pages (from-to)	1325-1328
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	41 1
DOIs	https://doi.org/10.1889/1.3499938
State	Published - May 2010
Externally published	Yes

Access to Document

10.1889/1.3499938

Cite this

@article{6a385be200af4ff591873f335112a8de,

title = "P-28: Effect of annealing temperature on reliability of solution-processed zinc tin oxide thin film transistors",

abstract = "We fabricated solution-processed ZTO TFTs with annealing temperature of 300 °C ∼ 550 °C in order to investigate the reliability of ZTO TFT. The shift of threshold voltage by gate bias-stress of ZTO TFTs is altered according to annealing temperature because of the increase and decrease of trap states caused by bonding variation.",

author = "Lee, \{Jeong Soo\} and Kim, \{Yong Jin\} and Lee, \{Yong Uk\} and Kuk, \{Seung Hee\} and Han, \{Min Koo\} and Kim, \{Yong Hoon\}",

year = "2010",

month = may,

doi = "10.1889/1.3499938",

language = "English",

volume = "41 1",

pages = "1325--1328",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc",

}

TY - JOUR

T1 - P-28

T2 - Effect of annealing temperature on reliability of solution-processed zinc tin oxide thin film transistors

AU - Lee, Jeong Soo

AU - Kim, Yong Jin

AU - Lee, Yong Uk

AU - Kuk, Seung Hee

AU - Han, Min Koo

AU - Kim, Yong Hoon

PY - 2010/5

Y1 - 2010/5

N2 - We fabricated solution-processed ZTO TFTs with annealing temperature of 300 °C ∼ 550 °C in order to investigate the reliability of ZTO TFT. The shift of threshold voltage by gate bias-stress of ZTO TFTs is altered according to annealing temperature because of the increase and decrease of trap states caused by bonding variation.

AB - We fabricated solution-processed ZTO TFTs with annealing temperature of 300 °C ∼ 550 °C in order to investigate the reliability of ZTO TFT. The shift of threshold voltage by gate bias-stress of ZTO TFTs is altered according to annealing temperature because of the increase and decrease of trap states caused by bonding variation.

UR - https://www.scopus.com/pages/publications/84863323242

U2 - 10.1889/1.3499938

DO - 10.1889/1.3499938

M3 - Article

AN - SCOPUS:84863323242

SN - 0097-966X

VL - 41 1

SP - 1325

EP - 1328

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

ER -

P-28: Effect of annealing temperature on reliability of solution-processed zinc tin oxide thin film transistors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this