Oxygen vacancies in SrTiO3

Euiyoung Choi; Joho Kim; Doduc Cuong; Jaichan Lee

doi:10.1109/ISAF.2008.4693917

Oxygen vacancies in SrTiO₃

Euiyoung Choi
, Joho Kim
, Doduc Cuong
, Jaichan Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Oxygen vacancy clustering in SrTiO_3-δ thin films has been investigated by electrical transport and photoemission spectroscopy. We deposited SrTiO_3-δ thin films on LaAlO3(001) substrate at reducing oxygen ambients. The carrier density did not increase with decreasing the ambient oxygen pressure. Photoemission study shows multi valence state of Ti ion including Ti⁺² which localized state. Those results are explained by electron localization via oxygen vacancy clustering.

Original language	English
Title of host publication	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
DOIs	https://doi.org/10.1109/ISAF.2008.4693917
State	Published - 2008
Event	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States Duration: 23 Feb 2008 → 28 Feb 2008

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics
Volume	1

Conference

Conference	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Country/Territory	United States
City	Santa Fe, NM
Period	23/02/08 → 28/02/08

Access to Document

10.1109/ISAF.2008.4693917

Cite this

@inproceedings{9bb51f38fd214851909046faa044bb1a,

title = "Oxygen vacancies in SrTiO3",

abstract = "Oxygen vacancy clustering in SrTiO3-δ thin films has been investigated by electrical transport and photoemission spectroscopy. We deposited SrTiO3-δ thin films on LaAlO3(001) substrate at reducing oxygen ambients. The carrier density did not increase with decreasing the ambient oxygen pressure. Photoemission study shows multi valence state of Ti ion including Ti+2 which localized state. Those results are explained by electron localization via oxygen vacancy clustering.",

author = "Euiyoung Choi and Joho Kim and Doduc Cuong and Jaichan Lee",

year = "2008",

doi = "10.1109/ISAF.2008.4693917",

language = "English",

isbn = "1424427444",

series = "IEEE International Symposium on Applications of Ferroelectrics",

booktitle = "17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008",

note = "17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 ; Conference date: 23-02-2008 Through 28-02-2008",

}

Choi, E, Kim, J, Cuong, D & Lee, J 2008, Oxygen vacancies in SrTiO₃. in 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008., 4693917, IEEE International Symposium on Applications of Ferroelectrics, vol. 1, 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008, Santa Fe, NM, United States, 23/02/08. https://doi.org/10.1109/ISAF.2008.4693917

TY - GEN

T1 - Oxygen vacancies in SrTiO3

AU - Choi, Euiyoung

AU - Kim, Joho

AU - Cuong, Doduc

AU - Lee, Jaichan

PY - 2008

Y1 - 2008

N2 - Oxygen vacancy clustering in SrTiO3-δ thin films has been investigated by electrical transport and photoemission spectroscopy. We deposited SrTiO3-δ thin films on LaAlO3(001) substrate at reducing oxygen ambients. The carrier density did not increase with decreasing the ambient oxygen pressure. Photoemission study shows multi valence state of Ti ion including Ti+2 which localized state. Those results are explained by electron localization via oxygen vacancy clustering.

AB - Oxygen vacancy clustering in SrTiO3-δ thin films has been investigated by electrical transport and photoemission spectroscopy. We deposited SrTiO3-δ thin films on LaAlO3(001) substrate at reducing oxygen ambients. The carrier density did not increase with decreasing the ambient oxygen pressure. Photoemission study shows multi valence state of Ti ion including Ti+2 which localized state. Those results are explained by electron localization via oxygen vacancy clustering.

UR - https://www.scopus.com/pages/publications/58149503238

U2 - 10.1109/ISAF.2008.4693917

DO - 10.1109/ISAF.2008.4693917

M3 - Conference contribution

AN - SCOPUS:58149503238

SN - 1424427444

SN - 9781424427444

T3 - IEEE International Symposium on Applications of Ferroelectrics

BT - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008

T2 - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008

Y2 - 23 February 2008 through 28 February 2008

ER -