Organic bistable memory device using MoO3 nanocrystal as a charge trapping center

Kyoung Soo Yook; Soon Ok Jeon; Chul Woong Joo; Jun Yeob Lee; Sung Hyun Kim; Jyongsik Jang

doi:10.1016/j.orgel.2008.10.002

Organic bistable memory device using MoO₃ nanocrystal as a charge trapping center

Kyoung Soo Yook
, Soon Ok Jeon
, Chul Woong Joo
, Jun Yeob Lee
, Sung Hyun Kim
, Jyongsik Jang

Dankook University
Seoul National University

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Organic bistable memory devices (OBDs) with MoO₃ as a nanocrystal inside organic layer were developed and bistability of MoO₃ based OBDs was investigated. High on/off ratio over 200 was obtained at a low reading voltage of 1 V. MoO₃ OBDs could be electrically switched between high conductance state and low conductance state over more than 100 cycles and space charge limited conduction mechanism dominated switching behavior in MoO₃ OBDs.

Original language	English
Pages (from-to)	48-52
Number of pages	5
Journal	Organic Electronics
Volume	10
Issue number	1
DOIs	https://doi.org/10.1016/j.orgel.2008.10.002
State	Published - Feb 2009
Externally published	Yes

Keywords

Bistability
MoO nanocrystal
Organic memory device

Access to Document

10.1016/j.orgel.2008.10.002

Cite this

@article{0713d42a3a7240129ef4f59b351704f6,

title = "Organic bistable memory device using MoO3 nanocrystal as a charge trapping center",

abstract = "Organic bistable memory devices (OBDs) with MoO3 as a nanocrystal inside organic layer were developed and bistability of MoO3 based OBDs was investigated. High on/off ratio over 200 was obtained at a low reading voltage of 1 V. MoO3 OBDs could be electrically switched between high conductance state and low conductance state over more than 100 cycles and space charge limited conduction mechanism dominated switching behavior in MoO3 OBDs.",

keywords = "Bistability, MoO nanocrystal, Organic memory device",

author = "Yook, \{Kyoung Soo\} and Jeon, \{Soon Ok\} and Joo, \{Chul Woong\} and Lee, \{Jun Yeob\} and Kim, \{Sung Hyun\} and Jyongsik Jang",

year = "2009",

month = feb,

doi = "10.1016/j.orgel.2008.10.002",

language = "English",

volume = "10",

pages = "48--52",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Organic bistable memory device using MoO3 nanocrystal as a charge trapping center

AU - Yook, Kyoung Soo

AU - Jeon, Soon Ok

AU - Joo, Chul Woong

AU - Lee, Jun Yeob

AU - Kim, Sung Hyun

AU - Jang, Jyongsik

PY - 2009/2

Y1 - 2009/2

N2 - Organic bistable memory devices (OBDs) with MoO3 as a nanocrystal inside organic layer were developed and bistability of MoO3 based OBDs was investigated. High on/off ratio over 200 was obtained at a low reading voltage of 1 V. MoO3 OBDs could be electrically switched between high conductance state and low conductance state over more than 100 cycles and space charge limited conduction mechanism dominated switching behavior in MoO3 OBDs.

AB - Organic bistable memory devices (OBDs) with MoO3 as a nanocrystal inside organic layer were developed and bistability of MoO3 based OBDs was investigated. High on/off ratio over 200 was obtained at a low reading voltage of 1 V. MoO3 OBDs could be electrically switched between high conductance state and low conductance state over more than 100 cycles and space charge limited conduction mechanism dominated switching behavior in MoO3 OBDs.

KW - Bistability

KW - MoO nanocrystal

KW - Organic memory device

UR - https://www.scopus.com/pages/publications/58049139082

U2 - 10.1016/j.orgel.2008.10.002

DO - 10.1016/j.orgel.2008.10.002

M3 - Article

AN - SCOPUS:58049139082

SN - 1566-1199

VL - 10

SP - 48

EP - 52

JO - Organic Electronics

JF - Organic Electronics

IS - 1

ER -

Organic bistable memory device using MoO₃ nanocrystal as a charge trapping center

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this