Optimum channel thickness in pentacene-based thin-film transistors

Jiyoul Lee; Kibum Kim; Jae Hoon Kim; Seongil Im; Duk Young Jung

doi:10.1063/1.1580993

Optimum channel thickness in pentacene-based thin-film transistors

Jiyoul Lee, Kibum Kim, Jae Hoon Kim, Seongil Im, Duk Young Jung

Department of Chemistry

Yonsei University

Research output: Contribution to journal › Article › peer-review

98 Scopus citations

Abstract

The influence of pentacene channel thickness on the field-effect hole mobility in pentacene-based thin film transistors (TFT) was discussed. It was observed that the pentacene channel layers were deposited in the thickness range of 16-90 nm by thermal evaporation on 450 nm thick Al₂O_3+x dielectric films. It was found that the TFT with increasing thinner pentacene layers displayed higher hole mobility.

Original language	English
Pages (from-to)	4169-4171
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	23
DOIs	https://doi.org/10.1063/1.1580993
State	Published - 9 Jun 2003

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@article{75e5a9636c744671b265e9f6d519d514,

title = "Optimum channel thickness in pentacene-based thin-film transistors",

abstract = "The influence of pentacene channel thickness on the field-effect hole mobility in pentacene-based thin film transistors (TFT) was discussed. It was observed that the pentacene channel layers were deposited in the thickness range of 16-90 nm by thermal evaporation on 450 nm thick Al2O3+x dielectric films. It was found that the TFT with increasing thinner pentacene layers displayed higher hole mobility.",

author = "Jiyoul Lee and Kibum Kim and Kim, \{Jae Hoon\} and Seongil Im and Jung, \{Duk Young\}",

year = "2003",

month = jun,

day = "9",

doi = "10.1063/1.1580993",

language = "English",

volume = "82",

pages = "4169--4171",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Optimum channel thickness in pentacene-based thin-film transistors

AU - Lee, Jiyoul

AU - Kim, Kibum

AU - Kim, Jae Hoon

AU - Im, Seongil

AU - Jung, Duk Young

PY - 2003/6/9

Y1 - 2003/6/9

N2 - The influence of pentacene channel thickness on the field-effect hole mobility in pentacene-based thin film transistors (TFT) was discussed. It was observed that the pentacene channel layers were deposited in the thickness range of 16-90 nm by thermal evaporation on 450 nm thick Al2O3+x dielectric films. It was found that the TFT with increasing thinner pentacene layers displayed higher hole mobility.

AB - The influence of pentacene channel thickness on the field-effect hole mobility in pentacene-based thin film transistors (TFT) was discussed. It was observed that the pentacene channel layers were deposited in the thickness range of 16-90 nm by thermal evaporation on 450 nm thick Al2O3+x dielectric films. It was found that the TFT with increasing thinner pentacene layers displayed higher hole mobility.

UR - https://www.scopus.com/pages/publications/0038166414

U2 - 10.1063/1.1580993

DO - 10.1063/1.1580993

M3 - Article

AN - SCOPUS:0038166414

SN - 0003-6951

VL - 82

SP - 4169

EP - 4171

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Optimum channel thickness in pentacene-based thin-film transistors

Abstract

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