Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction

Ryun Han Koo; Wonjun Shin; Kyung Kyu Min; Dongseok Kwon; Jae Joon Kim; Daewoong Kwon; Jong Ho Lee

doi:10.1109/LED.2023.3267771

Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction

Ryun Han Koo
, Wonjun Shin
, Kyung Kyu Min
, Dongseok Kwon
, Jae Joon Kim
, Daewoong Kwon
, Jong Ho Lee

Seoul National University
Hanyang University

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We investigate the effect of post-metal annealing temperature ( ${T}_{\text {PMA}}$ ) on ferroelectric (FE) resistive switching (RS) and non-FE RS in HfOx ferroelectric tunnel junctions. Through conductance analysis and low-frequency noise spectroscopy, the effects of ${T}_{\text {PMA}}$ on RS mechanisms are demonstrated. It is revealed that the non-FE RS, redistribution of oxygen vacancies, is suppressed with an increase in ${T}_{\text {PMA}}$. The effects of different RS mechanisms on the tunneling electroresistance and cycling endurance characteristics are systematically investigated.

Original language	English
Pages (from-to)	935-938
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	44
Issue number	6
DOIs	https://doi.org/10.1109/LED.2023.3267771
State	Published - 1 Jun 2023
Externally published	Yes

Keywords

Ferroelectric tunnel junction (FTJ)
low-frequency noise (LFN)
post-metal annealing (PMA)

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10.1109/LED.2023.3267771

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title = "Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction",

abstract = "We investigate the effect of post-metal annealing temperature ( \$\{T\}\_\{\textbackslash{}text \{PMA\}\}\$ ) on ferroelectric (FE) resistive switching (RS) and non-FE RS in HfOx ferroelectric tunnel junctions. Through conductance analysis and low-frequency noise spectroscopy, the effects of \$\{T\}\_\{\textbackslash{}text \{PMA\}\}\$ on RS mechanisms are demonstrated. It is revealed that the non-FE RS, redistribution of oxygen vacancies, is suppressed with an increase in \$\{T\}\_\{\textbackslash{}text \{PMA\}\}\$. The effects of different RS mechanisms on the tunneling electroresistance and cycling endurance characteristics are systematically investigated.",

keywords = "Ferroelectric tunnel junction (FTJ), low-frequency noise (LFN), post-metal annealing (PMA)",

author = "Koo, \{Ryun Han\} and Wonjun Shin and Min, \{Kyung Kyu\} and Dongseok Kwon and Kim, \{Jae Joon\} and Daewoong Kwon and Lee, \{Jong Ho\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2023",

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doi = "10.1109/LED.2023.3267771",

language = "English",

volume = "44",

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journal = "IEEE Electron Device Letters",

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TY - JOUR

T1 - Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction

AU - Koo, Ryun Han

AU - Shin, Wonjun

AU - Min, Kyung Kyu

AU - Kwon, Dongseok

AU - Kim, Jae Joon

AU - Kwon, Daewoong

AU - Lee, Jong Ho

PY - 2023/6/1

Y1 - 2023/6/1

N2 - We investigate the effect of post-metal annealing temperature ( ${T}_{\text {PMA}}$ ) on ferroelectric (FE) resistive switching (RS) and non-FE RS in HfOx ferroelectric tunnel junctions. Through conductance analysis and low-frequency noise spectroscopy, the effects of ${T}_{\text {PMA}}$ on RS mechanisms are demonstrated. It is revealed that the non-FE RS, redistribution of oxygen vacancies, is suppressed with an increase in ${T}_{\text {PMA}}$. The effects of different RS mechanisms on the tunneling electroresistance and cycling endurance characteristics are systematically investigated.

AB - We investigate the effect of post-metal annealing temperature ( ${T}_{\text {PMA}}$ ) on ferroelectric (FE) resistive switching (RS) and non-FE RS in HfOx ferroelectric tunnel junctions. Through conductance analysis and low-frequency noise spectroscopy, the effects of ${T}_{\text {PMA}}$ on RS mechanisms are demonstrated. It is revealed that the non-FE RS, redistribution of oxygen vacancies, is suppressed with an increase in ${T}_{\text {PMA}}$. The effects of different RS mechanisms on the tunneling electroresistance and cycling endurance characteristics are systematically investigated.

KW - Ferroelectric tunnel junction (FTJ)

KW - low-frequency noise (LFN)

KW - post-metal annealing (PMA)

UR - https://www.scopus.com/pages/publications/85153501107

U2 - 10.1109/LED.2023.3267771

DO - 10.1109/LED.2023.3267771

M3 - Article

AN - SCOPUS:85153501107

SN - 0741-3106

VL - 44

SP - 935

EP - 938

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction

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Keywords

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