Optimizing electrostatic chuck performance through ZrO₂/Al₂O₃ ratio and doping components (SiO₂ and Y₂O₃)

This study explores the enhancement of electrostatic chuck (ESC) performance through the modulation of the ZrO₂/Al₂O₃ ratio, with additional doping of Y₂O₃ and SiO₂, deposited via Atmospheric Plasma Spraying (APS). Three different ZrO₂/Al₂O₃ mixed powders, further doped with Y₂O₃ and SiO₂, were prepared and analyzed for their electrical and mechanical properties. By utilizing APS to deposit these coatings, we achieved uniform and crack-free layers with controlled thickness and consistent mechanical properties. Notably, the mixed powder with the highest ZrO₂ content achieved a relative dielectric constant of about 22 with a volume resistivity of ∼1.0 × 10¹⁴ Ωcm. The enhanced dielectric constant and reduced resistivity induced the Johnsen-Rahbek (J-R) effect, leading to an improved clamping force 25 gf/cm² on glass substrate, exceeding the industrial requirement of 10∼15 gf/cm². Additionally, this ZrO₂/Al₂O₃ composition demonstrated a breakdown voltage of approximately 4200 V and a dielectric strength of about 17 V/μm, showcasing better voltage stability compared to traditional TiO₂-doped Al₂O₃. The high breakdown strength and excellent adhesion force suggest that ZrO₂-Al₂O₃ coatings, along with Y₂O₃ and SiO₂ doping, offer superior performance and reliability, making them viable alternatives to traditional TiO₂-doped Al₂O₃ chucks in advanced semiconductor manufacturing applications.