Optimization of solution-processed ITZO/IGZO dual-active-layer thin-film transistors

Jongmin Kim; Pyungho Choi; Nayoung Lee; Sangsoo Kim; Byoungdeog Choi

doi:10.1166/jnn.2016.13163

Optimization of solution-processed ITZO/IGZO dual-active-layer thin-film transistors

Jongmin Kim, Pyungho Choi, Nayoung Lee, Sangsoo Kim, Byoungdeog Choi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We successfully fabricated dual-active-layer (DAL) thin-film transistors (TFTs) via a solution process with an active back InGaZnO (IGZO) layer and an active front InSnZnO (ITZO) layer. Our optimized DAL TFT displayed optimal performance characteristics with a saturation mobility (μ_sat) of 11.5 cm²/V·s, a steep subthreshold swing of 0.36 V/dec, and a high on/off ratio exceeding 10⁷. This mobility represents an order of magnitude increase when compared to a single active layer (SAL) TFT with an ITZO active layer. Furthermore, the devices exhibited an improved positive bias stress (PBS) of ΔV_TH +2.6 V under a positive bias stress of 10 V. In order to determine which factors resulted in the observed enhanced electrical performance, we analyzed the role of the front and back channels while varying the molarity of the active layer. Changes in the front and back channels influenced the current path, the V_TH and the off current.

Original language	English
Pages (from-to)	10373-10379
Number of pages	7
Journal	Journal of Nanoscience and Nanotechnology
Volume	16
Issue number	10
DOIs	https://doi.org/10.1166/jnn.2016.13163
State	Published - Oct 2016

Keywords

Amorphous oxide semiconductors
Dual active layer
IGZO
ITZO
Solution process

Access to Document

10.1166/jnn.2016.13163

Cite this

@article{013d3c354f464f0d939bce7f06bf19d4,

title = "Optimization of solution-processed ITZO/IGZO dual-active-layer thin-film transistors",

abstract = "We successfully fabricated dual-active-layer (DAL) thin-film transistors (TFTs) via a solution process with an active back InGaZnO (IGZO) layer and an active front InSnZnO (ITZO) layer. Our optimized DAL TFT displayed optimal performance characteristics with a saturation mobility (μsat) of 11.5 cm2/V·s, a steep subthreshold swing of 0.36 V/dec, and a high on/off ratio exceeding 107. This mobility represents an order of magnitude increase when compared to a single active layer (SAL) TFT with an ITZO active layer. Furthermore, the devices exhibited an improved positive bias stress (PBS) of ΔVTH +2.6 V under a positive bias stress of 10 V. In order to determine which factors resulted in the observed enhanced electrical performance, we analyzed the role of the front and back channels while varying the molarity of the active layer. Changes in the front and back channels influenced the current path, the VTH and the off current.",

keywords = "Amorphous oxide semiconductors, Dual active layer, IGZO, ITZO, Solution process",

author = "Jongmin Kim and Pyungho Choi and Nayoung Lee and Sangsoo Kim and Byoungdeog Choi",

year = "2016",

month = oct,

doi = "10.1166/jnn.2016.13163",

language = "English",

volume = "16",

pages = "10373--10379",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "10",

}

TY - JOUR

T1 - Optimization of solution-processed ITZO/IGZO dual-active-layer thin-film transistors

AU - Kim, Jongmin

AU - Choi, Pyungho

AU - Lee, Nayoung

AU - Kim, Sangsoo

AU - Choi, Byoungdeog

PY - 2016/10

Y1 - 2016/10

N2 - We successfully fabricated dual-active-layer (DAL) thin-film transistors (TFTs) via a solution process with an active back InGaZnO (IGZO) layer and an active front InSnZnO (ITZO) layer. Our optimized DAL TFT displayed optimal performance characteristics with a saturation mobility (μsat) of 11.5 cm2/V·s, a steep subthreshold swing of 0.36 V/dec, and a high on/off ratio exceeding 107. This mobility represents an order of magnitude increase when compared to a single active layer (SAL) TFT with an ITZO active layer. Furthermore, the devices exhibited an improved positive bias stress (PBS) of ΔVTH +2.6 V under a positive bias stress of 10 V. In order to determine which factors resulted in the observed enhanced electrical performance, we analyzed the role of the front and back channels while varying the molarity of the active layer. Changes in the front and back channels influenced the current path, the VTH and the off current.

AB - We successfully fabricated dual-active-layer (DAL) thin-film transistors (TFTs) via a solution process with an active back InGaZnO (IGZO) layer and an active front InSnZnO (ITZO) layer. Our optimized DAL TFT displayed optimal performance characteristics with a saturation mobility (μsat) of 11.5 cm2/V·s, a steep subthreshold swing of 0.36 V/dec, and a high on/off ratio exceeding 107. This mobility represents an order of magnitude increase when compared to a single active layer (SAL) TFT with an ITZO active layer. Furthermore, the devices exhibited an improved positive bias stress (PBS) of ΔVTH +2.6 V under a positive bias stress of 10 V. In order to determine which factors resulted in the observed enhanced electrical performance, we analyzed the role of the front and back channels while varying the molarity of the active layer. Changes in the front and back channels influenced the current path, the VTH and the off current.

KW - Amorphous oxide semiconductors

KW - Dual active layer

KW - IGZO

KW - ITZO

KW - Solution process

UR - https://www.scopus.com/pages/publications/84991063196

U2 - 10.1166/jnn.2016.13163

DO - 10.1166/jnn.2016.13163

M3 - Article

AN - SCOPUS:84991063196

SN - 1533-4880

VL - 16

SP - 10373

EP - 10379

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 10

ER -

Optimization of solution-processed ITZO/IGZO dual-active-layer thin-film transistors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this