Optimization of CMP process for TSV reveal in consideration of critical defect

Donghoon Lee; Dohyeong Kim; Seungchul Han; Joohyun Kim; Jungsoo Park; Bora Jang; Youngsuk Chung; Seongmin Seo; Yongsang Kim; Choonheung Lee

doi:10.1109/ECTC.2014.6897545

Optimization of CMP process for TSV reveal in consideration of critical defect

Donghoon Lee
, Dohyeong Kim
, Seungchul Han
, Joohyun Kim
, Jungsoo Park
, Bora Jang
, Youngsuk Chung
, Seongmin Seo
, Yongsang Kim
, Choonheung Lee

Department of Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In this paper, we discuss the optimization of CMP process for mid-end-of-line (MEOL). TSV breaking and blister are the two types of critical defects during CMP. TSV breaking occurs due to high principle stress at the bottom of TSV and blister occurs because of adhesive deformation. Therefore, we suggest a new process schematic for CMP and the use of thermally stable adhesive material to prevent these critical defects. Later we optimized CMP process in consideration of via height, throughput and non-uniformity without any critical defects. TSV was successfully revealed without TSV breaking. The result shows less 10 % WIWNU, WIDNU and less 10 nm TSV dishing.

Original language	English
Title of host publication	Proceedings - Electronic Components and Technology Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1816-1821
Number of pages	6
ISBN (Electronic)	9781479924073
DOIs	https://doi.org/10.1109/ECTC.2014.6897545
State	Published - 11 Sep 2014
Event	64th Electronic Components and Technology Conference, ECTC 2014 - Orlando, United States Duration: 27 May 2014 → 30 May 2014

Publication series

Name	Proceedings - Electronic Components and Technology Conference
ISSN (Print)	0569-5503

Conference

Conference	64th Electronic Components and Technology Conference, ECTC 2014
Country/Territory	United States
City	Orlando
Period	27/05/14 → 30/05/14

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10.1109/ECTC.2014.6897545

Cite this

Lee, D., Kim, D., Han, S., Kim, J., Park, J., Jang, B., Chung, Y., Seo, S., Kim, Y., & Lee, C. (2014). Optimization of CMP process for TSV reveal in consideration of critical defect. In Proceedings - Electronic Components and Technology Conference (pp. 1816-1821). Article 6897545 (Proceedings - Electronic Components and Technology Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2014.6897545

@inproceedings{14475e8fa1114e6bb5702feb2010b589,

title = "Optimization of CMP process for TSV reveal in consideration of critical defect",

abstract = "In this paper, we discuss the optimization of CMP process for mid-end-of-line (MEOL). TSV breaking and blister are the two types of critical defects during CMP. TSV breaking occurs due to high principle stress at the bottom of TSV and blister occurs because of adhesive deformation. Therefore, we suggest a new process schematic for CMP and the use of thermally stable adhesive material to prevent these critical defects. Later we optimized CMP process in consideration of via height, throughput and non-uniformity without any critical defects. TSV was successfully revealed without TSV breaking. The result shows less 10 \% WIWNU, WIDNU and less 10 nm TSV dishing.",

author = "Donghoon Lee and Dohyeong Kim and Seungchul Han and Joohyun Kim and Jungsoo Park and Bora Jang and Youngsuk Chung and Seongmin Seo and Yongsang Kim and Choonheung Lee",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 64th Electronic Components and Technology Conference, ECTC 2014 ; Conference date: 27-05-2014 Through 30-05-2014",

year = "2014",

month = sep,

day = "11",

doi = "10.1109/ECTC.2014.6897545",

language = "English",

series = "Proceedings - Electronic Components and Technology Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1816--1821",

booktitle = "Proceedings - Electronic Components and Technology Conference",

}

Lee, D, Kim, D, Han, S, Kim, J, Park, J, Jang, B, Chung, Y, Seo, S, Kim, Y & Lee, C 2014, Optimization of CMP process for TSV reveal in consideration of critical defect. in Proceedings - Electronic Components and Technology Conference., 6897545, Proceedings - Electronic Components and Technology Conference, Institute of Electrical and Electronics Engineers Inc., pp. 1816-1821, 64th Electronic Components and Technology Conference, ECTC 2014, Orlando, United States, 27/05/14. https://doi.org/10.1109/ECTC.2014.6897545

Optimization of CMP process for TSV reveal in consideration of critical defect. / Lee, Donghoon; Kim, Dohyeong; Han, Seungchul et al.
Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1816-1821 6897545 (Proceedings - Electronic Components and Technology Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Optimization of CMP process for TSV reveal in consideration of critical defect

AU - Lee, Donghoon

AU - Kim, Dohyeong

AU - Han, Seungchul

AU - Kim, Joohyun

AU - Park, Jungsoo

AU - Jang, Bora

AU - Chung, Youngsuk

AU - Seo, Seongmin

AU - Kim, Yongsang

AU - Lee, Choonheung

PY - 2014/9/11

Y1 - 2014/9/11

N2 - In this paper, we discuss the optimization of CMP process for mid-end-of-line (MEOL). TSV breaking and blister are the two types of critical defects during CMP. TSV breaking occurs due to high principle stress at the bottom of TSV and blister occurs because of adhesive deformation. Therefore, we suggest a new process schematic for CMP and the use of thermally stable adhesive material to prevent these critical defects. Later we optimized CMP process in consideration of via height, throughput and non-uniformity without any critical defects. TSV was successfully revealed without TSV breaking. The result shows less 10 % WIWNU, WIDNU and less 10 nm TSV dishing.

AB - In this paper, we discuss the optimization of CMP process for mid-end-of-line (MEOL). TSV breaking and blister are the two types of critical defects during CMP. TSV breaking occurs due to high principle stress at the bottom of TSV and blister occurs because of adhesive deformation. Therefore, we suggest a new process schematic for CMP and the use of thermally stable adhesive material to prevent these critical defects. Later we optimized CMP process in consideration of via height, throughput and non-uniformity without any critical defects. TSV was successfully revealed without TSV breaking. The result shows less 10 % WIWNU, WIDNU and less 10 nm TSV dishing.

UR - https://www.scopus.com/pages/publications/84907907436

U2 - 10.1109/ECTC.2014.6897545

DO - 10.1109/ECTC.2014.6897545

M3 - Conference contribution

AN - SCOPUS:84907907436

T3 - Proceedings - Electronic Components and Technology Conference

SP - 1816

EP - 1821

BT - Proceedings - Electronic Components and Technology Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Electronic Components and Technology Conference, ECTC 2014

Y2 - 27 May 2014 through 30 May 2014

ER -

Lee D, Kim D, Han S, Kim J, Park J, Jang B et al. Optimization of CMP process for TSV reveal in consideration of critical defect. In Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1816-1821. 6897545. (Proceedings - Electronic Components and Technology Conference). doi: 10.1109/ECTC.2014.6897545

Optimization of CMP process for TSV reveal in consideration of critical defect

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