TY - GEN
T1 - Optically pumped continuous-wave operation of InAlGaAs/InAlAs/InP based 1.55 μm vertical-cavity surface-emitting laser with SiO2/TiO2 dielectric mirror
AU - Baek, Jong Hyeob
AU - Han, Won Seok
AU - Cho, Hyung Koun
AU - Yoo, Byueng Su
AU - Lee, Bun
AU - Choi, In Hoon
N1 - Publisher Copyright:
© 1999 IEEE.
PY - 1999
Y1 - 1999
N2 - We have demonstrated continuous-wave (CW) photopumping of 1.55 pm vertical-cavity surface-emitting laser (VCSEL) with InAlGaAs/InAIAs/InP based structure. The VCSEL[I] operating at 1.55 pn is a promising light source due to its high coupling efficiency and low loss in the fiber-optic communications. The operation of 1.55 pm VCSEL, however, has several obstacles such as low index contrast in the mirror structure and the high nonradiative recombination in the narrow-gap active layer. Recently, the outcome has been significantly progressed by employing various attempts such as fusion technique, hybrid technique and growing alternative heterostructures using antimonide or InAIGaAs/InAlAs/InP-based structure. The InAIGaAs/InAlAs lattice matched to InP is an attractive heterostructure for the 1.55 pm VCSEL due to the relatively large contrast of refractive indices as compared with the InGaAsP/InP system and the fact that the structure contains a single group V element, thus allowing a better control of interfaces. Recently, Kazmierski et a1.[2] reported the pulsed opertion of I .55 pm VCSEL with bulk active layer grown with lnAlGaAs/lnAlAs/InP monolithic structure using electrical injection.
AB - We have demonstrated continuous-wave (CW) photopumping of 1.55 pm vertical-cavity surface-emitting laser (VCSEL) with InAlGaAs/InAIAs/InP based structure. The VCSEL[I] operating at 1.55 pn is a promising light source due to its high coupling efficiency and low loss in the fiber-optic communications. The operation of 1.55 pm VCSEL, however, has several obstacles such as low index contrast in the mirror structure and the high nonradiative recombination in the narrow-gap active layer. Recently, the outcome has been significantly progressed by employing various attempts such as fusion technique, hybrid technique and growing alternative heterostructures using antimonide or InAIGaAs/InAlAs/InP-based structure. The InAIGaAs/InAlAs lattice matched to InP is an attractive heterostructure for the 1.55 pm VCSEL due to the relatively large contrast of refractive indices as compared with the InGaAsP/InP system and the fact that the structure contains a single group V element, thus allowing a better control of interfaces. Recently, Kazmierski et a1.[2] reported the pulsed opertion of I .55 pm VCSEL with bulk active layer grown with lnAlGaAs/lnAlAs/InP monolithic structure using electrical injection.
UR - https://www.scopus.com/pages/publications/0033327196
U2 - 10.1109/CLEOPR.1999.817887
DO - 10.1109/CLEOPR.1999.817887
M3 - Conference contribution
AN - SCOPUS:0033327196
T3 - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
SP - 892
EP - 893
BT - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999
Y2 - 30 August 1999 through 3 September 1999
ER -