Optically pumped continuous-wave operation of InAlGaAs/InAlAs/InP based 1.55 μm vertical-cavity surface-emitting laser with SiO2/TiO2 dielectric mirror

Jong Hyeob Baek; Won Seok Han; Hyung Koun Cho; Bun Lee; In Hoon Choi

doi:10.1049/el:19990556

Optically pumped continuous-wave operation of InAlGaAs/InAlAs/InP based 1.55 μm vertical-cavity surface-emitting laser with SiO₂/TiO₂ dielectric mirror

Jong Hyeob Baek
, Won Seok Han
, Hyung Koun Cho
, Bun Lee
, In Hoon Choi

Korea University
Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A vertical-cavity surface-emitting laser operating at 1.55 μm has been demonstrated by CW photopumping up to 260 K. The structure consists of an InAlGaAs/InAlAs bottom mirror grown on InP substrate, a 2λ thick active region which has a periodic gain structure with 27 InAlGaAs/InGaAs quantum wells, and an SiO₂/TiO₂ dielectric top mirror. The input threshold power density has a minimum value of 3.4 kW/cm² at 220 K.

Original language	English
Pages (from-to)	814-815
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	10
DOIs	https://doi.org/10.1049/el:19990556
State	Published - 13 May 1999
Externally published	Yes

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10.1049/el:19990556

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title = "Optically pumped continuous-wave operation of InAlGaAs/InAlAs/InP based 1.55 μm vertical-cavity surface-emitting laser with SiO2/TiO2 dielectric mirror",

abstract = "A vertical-cavity surface-emitting laser operating at 1.55 μm has been demonstrated by CW photopumping up to 260 K. The structure consists of an InAlGaAs/InAlAs bottom mirror grown on InP substrate, a 2λ thick active region which has a periodic gain structure with 27 InAlGaAs/InGaAs quantum wells, and an SiO2/TiO2 dielectric top mirror. The input threshold power density has a minimum value of 3.4 kW/cm2 at 220 K.",

author = "Baek, \{Jong Hyeob\} and Han, \{Won Seok\} and Cho, \{Hyung Koun\} and Bun Lee and Choi, \{In Hoon\}",

year = "1999",

month = may,

day = "13",

doi = "10.1049/el:19990556",

language = "English",

volume = "35",

pages = "814--815",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "10",

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TY - JOUR

T1 - Optically pumped continuous-wave operation of InAlGaAs/InAlAs/InP based 1.55 μm vertical-cavity surface-emitting laser with SiO2/TiO2 dielectric mirror

AU - Baek, Jong Hyeob

AU - Han, Won Seok

AU - Cho, Hyung Koun

AU - Lee, Bun

AU - Choi, In Hoon

PY - 1999/5/13

Y1 - 1999/5/13

N2 - A vertical-cavity surface-emitting laser operating at 1.55 μm has been demonstrated by CW photopumping up to 260 K. The structure consists of an InAlGaAs/InAlAs bottom mirror grown on InP substrate, a 2λ thick active region which has a periodic gain structure with 27 InAlGaAs/InGaAs quantum wells, and an SiO2/TiO2 dielectric top mirror. The input threshold power density has a minimum value of 3.4 kW/cm2 at 220 K.

AB - A vertical-cavity surface-emitting laser operating at 1.55 μm has been demonstrated by CW photopumping up to 260 K. The structure consists of an InAlGaAs/InAlAs bottom mirror grown on InP substrate, a 2λ thick active region which has a periodic gain structure with 27 InAlGaAs/InGaAs quantum wells, and an SiO2/TiO2 dielectric top mirror. The input threshold power density has a minimum value of 3.4 kW/cm2 at 220 K.

UR - https://www.scopus.com/pages/publications/0032686307

U2 - 10.1049/el:19990556

DO - 10.1049/el:19990556

M3 - Article

AN - SCOPUS:0032686307

SN - 0013-5194

VL - 35

SP - 814

EP - 815

JO - Electronics Letters

JF - Electronics Letters

IS - 10

ER -

Optically pumped continuous-wave operation of InAlGaAs/InAlAs/InP based 1.55 μm vertical-cavity surface-emitting laser with SiO₂/TiO₂ dielectric mirror

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