Optical properties of J-shape ridge waveguide with trench structure for superluminescent diode using InAs/InGaAs quantum-dot active layer

Young Chae Yoo; Kyoung Chan Kim; Hong Yoon; Jung Hwa Jung; Jin Wook Jeong; Jung Il Lee; Gil Ho Kim; Ii Ki Han

doi:10.1109/CLEOPR.2007.4391212

Optical properties of J-shape ridge waveguide with trench structure for superluminescent diode using InAs/InGaAs quantum-dot active layer

Young Chae Yoo
, Kyoung Chan Kim
, Hong Yoon
, Jung Hwa Jung
, Jin Wook Jeong
, Jung Il Lee
, Gil Ho Kim
, Ii Ki Han

Department of Electronic and Electrical Engineering

Korea Institute of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

J-shape ridge waveguide with trench for superluminescent diode using InAs/InGaAs quantum-dot active layer was designed and fabricated. The following performance was realized under CW operation: above 80 mW output power at 900 mA, and about 45 nm 3-dB spectral bandwidth.

Original language	English
Title of host publication	2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
DOIs	https://doi.org/10.1109/CLEOPR.2007.4391212
State	Published - 2007
Event	2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM - Seoul, Korea, Republic of Duration: 26 Aug 2007 → 31 Aug 2007

Publication series

Name	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Conference

Conference	2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
Country/Territory	Korea, Republic of
City	Seoul
Period	26/08/07 → 31/08/07

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10.1109/CLEOPR.2007.4391212

Cite this

Yoo, Y. C., Kim, K. C., Yoon, H., Jung, J. H., Jeong, J. W., Lee, J. I., Kim, G. H., & Han, I. K. (2007). Optical properties of J-shape ridge waveguide with trench structure for superluminescent diode using InAs/InGaAs quantum-dot active layer. In 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM Article 4391212 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2007.4391212

@inproceedings{d692ea2444d64be293d043bb947476c6,

title = "Optical properties of J-shape ridge waveguide with trench structure for superluminescent diode using InAs/InGaAs quantum-dot active layer",

abstract = "J-shape ridge waveguide with trench for superluminescent diode using InAs/InGaAs quantum-dot active layer was designed and fabricated. The following performance was realized under CW operation: above 80 mW output power at 900 mA, and about 45 nm 3-dB spectral bandwidth.",

author = "Yoo, \{Young Chae\} and Kim, \{Kyoung Chan\} and Hong Yoon and Jung, \{Jung Hwa\} and Jeong, \{Jin Wook\} and Lee, \{Jung Il\} and Kim, \{Gil Ho\} and Han, \{Ii Ki\}",

year = "2007",

doi = "10.1109/CLEOPR.2007.4391212",

language = "English",

isbn = "1424411734",

series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

booktitle = "2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM",

note = "2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM ; Conference date: 26-08-2007 Through 31-08-2007",

}

Yoo, YC, Kim, KC, Yoon, H, Jung, JH, Jeong, JW, Lee, JI, Kim, GH & Han, IK 2007, Optical properties of J-shape ridge waveguide with trench structure for superluminescent diode using InAs/InGaAs quantum-dot active layer. in 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM., 4391212, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM, Seoul, Korea, Republic of, 26/08/07. https://doi.org/10.1109/CLEOPR.2007.4391212

Optical properties of J-shape ridge waveguide with trench structure for superluminescent diode using InAs/InGaAs quantum-dot active layer. / Yoo, Young Chae; Kim, Kyoung Chan; Yoon, Hong et al.
2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM. 2007. 4391212 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Optical properties of J-shape ridge waveguide with trench structure for superluminescent diode using InAs/InGaAs quantum-dot active layer

AU - Yoo, Young Chae

AU - Kim, Kyoung Chan

AU - Yoon, Hong

AU - Jung, Jung Hwa

AU - Jeong, Jin Wook

AU - Lee, Jung Il

AU - Kim, Gil Ho

AU - Han, Ii Ki

PY - 2007

Y1 - 2007

N2 - J-shape ridge waveguide with trench for superluminescent diode using InAs/InGaAs quantum-dot active layer was designed and fabricated. The following performance was realized under CW operation: above 80 mW output power at 900 mA, and about 45 nm 3-dB spectral bandwidth.

AB - J-shape ridge waveguide with trench for superluminescent diode using InAs/InGaAs quantum-dot active layer was designed and fabricated. The following performance was realized under CW operation: above 80 mW output power at 900 mA, and about 45 nm 3-dB spectral bandwidth.

UR - https://www.scopus.com/pages/publications/51249101371

U2 - 10.1109/CLEOPR.2007.4391212

DO - 10.1109/CLEOPR.2007.4391212

M3 - Conference contribution

AN - SCOPUS:51249101371

SN - 1424411734

SN - 9781424411733

T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

BT - 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM

T2 - 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM

Y2 - 26 August 2007 through 31 August 2007

ER -

Yoo YC, Kim KC, Yoon H, Jung JH, Jeong JW, Lee JI et al. Optical properties of J-shape ridge waveguide with trench structure for superluminescent diode using InAs/InGaAs quantum-dot active layer. In 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM. 2007. 4391212. (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). doi: 10.1109/CLEOPR.2007.4391212

Optical properties of J-shape ridge waveguide with trench structure for superluminescent diode using InAs/InGaAs quantum-dot active layer

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