Optical characterization of silica based waveguide prepared by plasma enhanced chemical vapor deposition

S. M. Cho; Y. T. Kim; D. H. Yoon; J. M. Kim; H. D. Yoon; Y. M. Im; G. E. Jang

Optical characterization of silica based waveguide prepared by plasma enhanced chemical vapor deposition

S. M. Cho
, Y. T. Kim
, D. H. Yoon
, J. M. Kim
, H. D. Yoon
, Y. M. Im
, G. E. Jang

Research output: Contribution to journal › Conference article › peer-review

Abstract

Silicon dioxide (SiO₂) and silicon oxynitride (SiON) thick films used for cladding and core layer of silica based waveguides were fabricated by plasma enhanced chemical vapor deposition (PECVD) method, at a low temperature (320 °C) and from (SiH₄+N₂O+N₂) gas mixtures. The effects of deposition parameters on properties of SiO₂ and SiON thick films were investigated by variations of SiH₄, N₂, N₂O flow ratio and RF power. The obtained SiO₂ films had a high thickness and refractive index of 1.460±0.001 with the annealing process. FTIR and XPS revealed that deposited films were nearly stoichiometric composition with no presence of hydrogen content. SiON films had a 0.75 % higher refractive index than the cladding layer and a high thickness(> 5 μm).

Original language	English
Pages (from-to)	S947-S951
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SUPPL.2
State	Published - Feb 2003
Event	Proceedings of the Joint International Plasma Symposium of 6th APCPST, 15th SPSM, OS 2002 and 11th KAPRA - Jeju Island, Korea, Republic of Duration: 1 Jul 2002 → 4 Jul 2002

Keywords

Optical waveguide
PECVD
Silicon dioxide
Silicon oxynitirde

Cite this

@article{cb065ae8918046e0a07b0b7b5c606d87,

title = "Optical characterization of silica based waveguide prepared by plasma enhanced chemical vapor deposition",

abstract = "Silicon dioxide (SiO2) and silicon oxynitride (SiON) thick films used for cladding and core layer of silica based waveguides were fabricated by plasma enhanced chemical vapor deposition (PECVD) method, at a low temperature (320 °C) and from (SiH4+N2O+N2) gas mixtures. The effects of deposition parameters on properties of SiO2 and SiON thick films were investigated by variations of SiH4, N2, N2O flow ratio and RF power. The obtained SiO2 films had a high thickness and refractive index of 1.460±0.001 with the annealing process. FTIR and XPS revealed that deposited films were nearly stoichiometric composition with no presence of hydrogen content. SiON films had a 0.75 \% higher refractive index than the cladding layer and a high thickness(> 5 μm).",

keywords = "Optical waveguide, PECVD, Silicon dioxide, Silicon oxynitirde",

author = "Cho, \{S. M.\} and Kim, \{Y. T.\} and Yoon, \{D. H.\} and Kim, \{J. M.\} and Yoon, \{H. D.\} and Im, \{Y. M.\} and Jang, \{G. E.\}",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S947--S951",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SUPPL.2",

note = "Proceedings of the Joint International Plasma Symposium of 6th APCPST, 15th SPSM, OS 2002 and 11th KAPRA ; Conference date: 01-07-2002 Through 04-07-2002",

}

TY - JOUR

T1 - Optical characterization of silica based waveguide prepared by plasma enhanced chemical vapor deposition

AU - Cho, S. M.

AU - Kim, Y. T.

AU - Yoon, D. H.

AU - Kim, J. M.

AU - Yoon, H. D.

AU - Im, Y. M.

AU - Jang, G. E.

PY - 2003/2

Y1 - 2003/2

N2 - Silicon dioxide (SiO2) and silicon oxynitride (SiON) thick films used for cladding and core layer of silica based waveguides were fabricated by plasma enhanced chemical vapor deposition (PECVD) method, at a low temperature (320 °C) and from (SiH4+N2O+N2) gas mixtures. The effects of deposition parameters on properties of SiO2 and SiON thick films were investigated by variations of SiH4, N2, N2O flow ratio and RF power. The obtained SiO2 films had a high thickness and refractive index of 1.460±0.001 with the annealing process. FTIR and XPS revealed that deposited films were nearly stoichiometric composition with no presence of hydrogen content. SiON films had a 0.75 % higher refractive index than the cladding layer and a high thickness(> 5 μm).

AB - Silicon dioxide (SiO2) and silicon oxynitride (SiON) thick films used for cladding and core layer of silica based waveguides were fabricated by plasma enhanced chemical vapor deposition (PECVD) method, at a low temperature (320 °C) and from (SiH4+N2O+N2) gas mixtures. The effects of deposition parameters on properties of SiO2 and SiON thick films were investigated by variations of SiH4, N2, N2O flow ratio and RF power. The obtained SiO2 films had a high thickness and refractive index of 1.460±0.001 with the annealing process. FTIR and XPS revealed that deposited films were nearly stoichiometric composition with no presence of hydrogen content. SiON films had a 0.75 % higher refractive index than the cladding layer and a high thickness(> 5 μm).

KW - Optical waveguide

KW - PECVD

KW - Silicon dioxide

KW - Silicon oxynitirde

UR - https://www.scopus.com/pages/publications/0037309158

M3 - Conference article

AN - SCOPUS:0037309158

SN - 0374-4884

VL - 42

SP - S947-S951

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL.2

T2 - Proceedings of the Joint International Plasma Symposium of 6th APCPST, 15th SPSM, OS 2002 and 11th KAPRA

Y2 - 1 July 2002 through 4 July 2002

ER -

Optical characterization of silica based waveguide prepared by plasma enhanced chemical vapor deposition

Abstract

Keywords

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