Abstract
We investigated the optical and structural properties of ZnO thin films grown under the same growth condition by metalorganic chemical vapor deposition (MOCVD) on various substrates such as p-Si, n-GaN, c-sapphire, a-sapphire, glass, and ITO glass. The thickness and surface roughness of the ZnO films increased with increasing lattice mismatch between the film and substrate. The ZnO films on c-sapphire showed a higher carrier concentration and conductivity than the ZnO thin films on a-sapphire and glass. In addition, the intensity of the near band-edge emission and transmittance increased with decreasing lattice mismatch between the film and substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 399-403 |
| Number of pages | 5 |
| Journal | Physica B: Condensed Matter |
| Volume | 401-402 |
| DOIs | |
| State | Published - 15 Dec 2007 |
Keywords
- MOCVD
- Various substrates
- ZnO thin films