TY - JOUR
T1 - One-Pot Exfoliation of Graphitic C3N4 Quantum Dots for Blue QLEDs by Methylamine Intercalation
AU - He, Xingchen
AU - Liu, Yanliang
AU - Butch, Christopher J.
AU - Lee, Bo Ram
AU - Guo, Feng
AU - Wu, Jiangxiao
AU - Wang, Ziyang
AU - Lu, Qian
AU - Jeong, Jung Hyun
AU - Wang, Yiqing
AU - Park, Sung Heum
N1 - Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/10/1
Y1 - 2019/10/1
N2 - Here, a simplified synthesis of graphitic carbon nitride quantum dots (g-C3N4-QDs) with improved solution and electroluminescent properties using a one-pot methylamine intercalation–stripping method (OMIM) to hydrothermally exfoliate QDs from bulk graphitic carbon nitride (g-C3N4) is presented. The quantum dots synthesized by this method retain the blue photoluminescence with extremely high fluorescent quantum yield (47.0%). As compared to previously reported quantum dots, the g-C3N4-QDs synthesized herein have lower polydispersity and improved solution stability due to high absolute zeta-potential (−41.23 mV), which combine to create a much more tractable material for solution processed thin film fabrication. Spin coating of these QDs yields uniform films with full coverage and low surface roughness ideal for quantum dot light-emitting diode (QLED) fabrication. When incorporated into a functional QLED with OMIM g-C3N4-QDs as the emitting layer, the LED demonstrates ≈60× higher luminance (605 vs 11 Cd m−2) at lower operating voltage (9 vs 21 V), as compared to the previously reported first generation g-C3N4 QLEDs, though further work is needed to improve device stability.
AB - Here, a simplified synthesis of graphitic carbon nitride quantum dots (g-C3N4-QDs) with improved solution and electroluminescent properties using a one-pot methylamine intercalation–stripping method (OMIM) to hydrothermally exfoliate QDs from bulk graphitic carbon nitride (g-C3N4) is presented. The quantum dots synthesized by this method retain the blue photoluminescence with extremely high fluorescent quantum yield (47.0%). As compared to previously reported quantum dots, the g-C3N4-QDs synthesized herein have lower polydispersity and improved solution stability due to high absolute zeta-potential (−41.23 mV), which combine to create a much more tractable material for solution processed thin film fabrication. Spin coating of these QDs yields uniform films with full coverage and low surface roughness ideal for quantum dot light-emitting diode (QLED) fabrication. When incorporated into a functional QLED with OMIM g-C3N4-QDs as the emitting layer, the LED demonstrates ≈60× higher luminance (605 vs 11 Cd m−2) at lower operating voltage (9 vs 21 V), as compared to the previously reported first generation g-C3N4 QLEDs, though further work is needed to improve device stability.
KW - graphitic carbon nitride
KW - hydrothermal exfoliation
KW - metal-free semiconductors
KW - quantum dot light-emitting diodes
UR - https://www.scopus.com/pages/publications/85073775828
U2 - 10.1002/smll.201902735
DO - 10.1002/smll.201902735
M3 - Article
C2 - 31515970
AN - SCOPUS:85073775828
SN - 1613-6810
VL - 15
JO - Small
JF - Small
IS - 44
M1 - 1902735
ER -