One-dimensional van der Waals material InSeI with large band-gap for optoelectronic applications

Kyung Hwan Choi; Sooheon Cho; Byung Joo Jeong; Bom Lee; Jiho Jeon; Jinsu Kang; Xiaojie Zhang; Hyung Suk Oh; Jae Hyun Lee; Hak Ki Yu; Jae Young Choi

doi:10.1016/j.jallcom.2022.166995

One-dimensional van der Waals material InSeI with large band-gap for optoelectronic applications

Kyung Hwan Choi
, Sooheon Cho
, Byung Joo Jeong
, Bom Lee
, Jiho Jeon
, Jinsu Kang
, Xiaojie Zhang
, Hyung Suk Oh
, Jae Hyun Lee
, Hak Ki Yu
, Jae Young Choi

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We experimentally demonstrate for the first time that the bulk InSeI crystals can be effectively delaminated by micromechanical exfoliation into a few nanometer-scale InSeI nanowires, due to the presence of weak van der Waals (vdWs) interaction within the crystal lattice. The exfoliated InSeI nanowires show one-dimensional (1D) bundle structure, and the work function of InSeI measured by Scanning Kelvin probe microscopy shows strong dependency on its thickness. The InSeI has a large bandgap corresponding to 2.12 eV, and when applied to a UV-detecting device, it was confirmed that the device with excellent sensitivity can be obtained, because there is little interference in the infrared and visible light regions. Based on these results, InSeI could be a excellent candidate as an additional 1D vdWs material for optoelectronics, including photodetectors or photovoltaic devices.

Original language	English
Article number	166995
Journal	Journal of Alloys and Compounds
Volume	927
DOIs	https://doi.org/10.1016/j.jallcom.2022.166995
State	Published - 15 Dec 2022

Keywords

Nanowires
One-dimensional van der Waals
Optical property
Scanning Kelvin probe microscopy
UV-detectors

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.jallcom.2022.166995

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title = "One-dimensional van der Waals material InSeI with large band-gap for optoelectronic applications",

abstract = "We experimentally demonstrate for the first time that the bulk InSeI crystals can be effectively delaminated by micromechanical exfoliation into a few nanometer-scale InSeI nanowires, due to the presence of weak van der Waals (vdWs) interaction within the crystal lattice. The exfoliated InSeI nanowires show one-dimensional (1D) bundle structure, and the work function of InSeI measured by Scanning Kelvin probe microscopy shows strong dependency on its thickness. The InSeI has a large bandgap corresponding to 2.12 eV, and when applied to a UV-detecting device, it was confirmed that the device with excellent sensitivity can be obtained, because there is little interference in the infrared and visible light regions. Based on these results, InSeI could be a excellent candidate as an additional 1D vdWs material for optoelectronics, including photodetectors or photovoltaic devices.",

keywords = "Nanowires, One-dimensional van der Waals, Optical property, Scanning Kelvin probe microscopy, UV-detectors",

author = "Choi, \{Kyung Hwan\} and Sooheon Cho and Jeong, \{Byung Joo\} and Bom Lee and Jiho Jeon and Jinsu Kang and Xiaojie Zhang and Oh, \{Hyung Suk\} and Lee, \{Jae Hyun\} and Yu, \{Hak Ki\} and Choi, \{Jae Young\}",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = dec,

day = "15",

doi = "10.1016/j.jallcom.2022.166995",

language = "English",

volume = "927",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - One-dimensional van der Waals material InSeI with large band-gap for optoelectronic applications

AU - Choi, Kyung Hwan

AU - Cho, Sooheon

AU - Jeong, Byung Joo

AU - Lee, Bom

AU - Jeon, Jiho

AU - Kang, Jinsu

AU - Zhang, Xiaojie

AU - Oh, Hyung Suk

AU - Lee, Jae Hyun

AU - Yu, Hak Ki

AU - Choi, Jae Young

PY - 2022/12/15

Y1 - 2022/12/15

N2 - We experimentally demonstrate for the first time that the bulk InSeI crystals can be effectively delaminated by micromechanical exfoliation into a few nanometer-scale InSeI nanowires, due to the presence of weak van der Waals (vdWs) interaction within the crystal lattice. The exfoliated InSeI nanowires show one-dimensional (1D) bundle structure, and the work function of InSeI measured by Scanning Kelvin probe microscopy shows strong dependency on its thickness. The InSeI has a large bandgap corresponding to 2.12 eV, and when applied to a UV-detecting device, it was confirmed that the device with excellent sensitivity can be obtained, because there is little interference in the infrared and visible light regions. Based on these results, InSeI could be a excellent candidate as an additional 1D vdWs material for optoelectronics, including photodetectors or photovoltaic devices.

AB - We experimentally demonstrate for the first time that the bulk InSeI crystals can be effectively delaminated by micromechanical exfoliation into a few nanometer-scale InSeI nanowires, due to the presence of weak van der Waals (vdWs) interaction within the crystal lattice. The exfoliated InSeI nanowires show one-dimensional (1D) bundle structure, and the work function of InSeI measured by Scanning Kelvin probe microscopy shows strong dependency on its thickness. The InSeI has a large bandgap corresponding to 2.12 eV, and when applied to a UV-detecting device, it was confirmed that the device with excellent sensitivity can be obtained, because there is little interference in the infrared and visible light regions. Based on these results, InSeI could be a excellent candidate as an additional 1D vdWs material for optoelectronics, including photodetectors or photovoltaic devices.

KW - Nanowires

KW - One-dimensional van der Waals

KW - Optical property

KW - Scanning Kelvin probe microscopy

KW - UV-detectors

UR - https://www.scopus.com/pages/publications/85137279693

U2 - 10.1016/j.jallcom.2022.166995

DO - 10.1016/j.jallcom.2022.166995

M3 - Article

AN - SCOPUS:85137279693

SN - 0925-8388

VL - 927

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 166995

ER -

One-dimensional van der Waals material InSeI with large band-gap for optoelectronic applications

Abstract

Keywords

UN SDGs

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