On the low-field insulator-quantum Hall conductor transitions

Tsai Yu Huang; J. R. Juang; C. F. Huang; Gil Ho Kim; Chao Ping Huang; C. T. Liang; Y. H. Chang; Y. F. Chen; Y. Lee; D. A. Ritchie

doi:10.1016/j.physe.2003.11.258

On the low-field insulator-quantum Hall conductor transitions

Tsai Yu Huang
, J. R. Juang
, C. F. Huang
, Gil Ho Kim
, Chao Ping Huang
, C. T. Liang
, Y. H. Chang
, Y. F. Chen
, Y. Lee
, D. A. Ritchie

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

22 Scopus citations

Abstract

We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor ν = 4 on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the ν = 4 quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field localization to Landau quantization. The crossover, in fact, covers a wide range with respect to the magnetic field rather than only a small region near the critical point of the insulator-quantum Hall conductor transition.

Original language	English
Pages (from-to)	240-243
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	22
Issue number	1-3
DOIs	https://doi.org/10.1016/j.physe.2003.11.258
State	Published - Apr 2004
Event	15th International Conference on ELectronic Propreties - Nara, Japan Duration: 14 Jul 2003 → 18 Jul 2003

Keywords

Crossover
Insulator
Quantum Hall

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10.1016/j.physe.2003.11.258

Cite this

@article{bc062298db7f4d779bcacd7ec1190531,

title = "On the low-field insulator-quantum Hall conductor transitions",

abstract = "We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor ν = 4 on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the ν = 4 quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field localization to Landau quantization. The crossover, in fact, covers a wide range with respect to the magnetic field rather than only a small region near the critical point of the insulator-quantum Hall conductor transition.",

keywords = "Crossover, Insulator, Quantum Hall",

author = "Huang, \{Tsai Yu\} and Juang, \{J. R.\} and Huang, \{C. F.\} and Kim, \{Gil Ho\} and Huang, \{Chao Ping\} and Liang, \{C. T.\} and Chang, \{Y. H.\} and Chen, \{Y. F.\} and Y. Lee and Ritchie, \{D. A.\}",

year = "2004",

month = apr,

doi = "10.1016/j.physe.2003.11.258",

language = "English",

volume = "22",

pages = "240--243",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-3",

note = "15th International Conference on ELectronic Propreties ; Conference date: 14-07-2003 Through 18-07-2003",

}

TY - JOUR

T1 - On the low-field insulator-quantum Hall conductor transitions

AU - Huang, Tsai Yu

AU - Juang, J. R.

AU - Huang, C. F.

AU - Kim, Gil Ho

AU - Huang, Chao Ping

AU - Liang, C. T.

AU - Chang, Y. H.

AU - Chen, Y. F.

AU - Lee, Y.

AU - Ritchie, D. A.

PY - 2004/4

Y1 - 2004/4

N2 - We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor ν = 4 on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the ν = 4 quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field localization to Landau quantization. The crossover, in fact, covers a wide range with respect to the magnetic field rather than only a small region near the critical point of the insulator-quantum Hall conductor transition.

AB - We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor ν = 4 on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the ν = 4 quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field localization to Landau quantization. The crossover, in fact, covers a wide range with respect to the magnetic field rather than only a small region near the critical point of the insulator-quantum Hall conductor transition.

KW - Crossover

KW - Insulator

KW - Quantum Hall

UR - https://www.scopus.com/pages/publications/11144358160

U2 - 10.1016/j.physe.2003.11.258

DO - 10.1016/j.physe.2003.11.258

M3 - Conference article

AN - SCOPUS:11144358160

SN - 1386-9477

VL - 22

SP - 240

EP - 243

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-3

T2 - 15th International Conference on ELectronic Propreties

Y2 - 14 July 2003 through 18 July 2003

ER -

On the low-field insulator-quantum Hall conductor transitions

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Keywords

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